Datasheets
LBSS123LT3G by: LRC Leshan Radio Co Ltd

Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN

Part Details for LBSS123LT3G by LRC Leshan Radio Co Ltd

Overview of LBSS123LT3G by LRC Leshan Radio Co Ltd

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Applications Consumer Electronics Security and Surveillance Space Technology Internet of Things (IoT) Environmental Monitoring Smart Cities Aerospace and Defense Healthcare Agriculture Technology Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Medical Imaging Robotics and Drones

Part Details for LBSS123LT3G

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LBSS123LT3G Part Data Attributes

LBSS123LT3G LRC Leshan Radio Co Ltd
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LBSS123LT3G LRC Leshan Radio Co Ltd Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN
Part Life Cycle Code Active
Ihs Manufacturer LESHAN RADIO CO LTD
Package Description SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 0.17 A
Drain-source On Resistance-Max 6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.225 W
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Element Material SILICON

Alternate Parts for LBSS123LT3G

This table gives cross-reference parts and alternative options found for LBSS123LT3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of LBSS123LT3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BS107RLRE 250mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, PLASTIC, TO-226AA, 3 PIN onsemi LBSS123LT3G vs BS107RLRE
VN1310N3P001 Small Signal Field-Effect Transistor, 0.25A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Supertex Inc LBSS123LT3G vs VN1310N3P001
UZVN3310FTC Small Signal Field-Effect Transistor, 0.1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Diodes Incorporated LBSS123LT3G vs UZVN3310FTC
MMBF5103S62Z N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB Texas Instruments LBSS123LT3G vs MMBF5103S62Z
TN0624N3 Small Signal Field-Effect Transistor, 0.4A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Supertex Inc LBSS123LT3G vs TN0624N3
RUE003N02TL Small Signal Field-Effect Transistor, 0.3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EMT3, 3 PIN ROHM Semiconductor LBSS123LT3G vs RUE003N02TL
2N7002KA Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN KEC LBSS123LT3G vs 2N7002KA
2N7002-T1-E3 Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, SOT-23, 3 PIN Vishay Intertechnologies LBSS123LT3G vs 2N7002-T1-E3
PN4857 N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 Texas Instruments LBSS123LT3G vs PN4857
MPF4858 Small Signal Field-Effect Transistor, 40V, 1-Element, N-Channel, Silicon, Junction FET, TO-92 Motorola Semiconductor Products LBSS123LT3G vs MPF4858

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