Part Details for LBSS123LT3G by LRC Leshan Radio Co Ltd
Overview of LBSS123LT3G by LRC Leshan Radio Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for LBSS123LT3G
LBSS123LT3G CAD Models
LBSS123LT3G Part Data Attributes
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LBSS123LT3G
LRC Leshan Radio Co Ltd
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Datasheet
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LBSS123LT3G
LRC Leshan Radio Co Ltd
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN
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Part Life Cycle Code | Active | |
Ihs Manufacturer | LESHAN RADIO CO LTD | |
Package Description | SMALL OUTLINE, R-PDSO-G3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 0.17 A | |
Drain-source On Resistance-Max | 6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.225 W | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Element Material | SILICON |
Alternate Parts for LBSS123LT3G
This table gives cross-reference parts and alternative options found for LBSS123LT3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of LBSS123LT3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BS107RLRE | 250mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, PLASTIC, TO-226AA, 3 PIN | onsemi | LBSS123LT3G vs BS107RLRE |
VN1310N3P001 | Small Signal Field-Effect Transistor, 0.25A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Supertex Inc | LBSS123LT3G vs VN1310N3P001 |
UZVN3310FTC | Small Signal Field-Effect Transistor, 0.1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Diodes Incorporated | LBSS123LT3G vs UZVN3310FTC |
MMBF5103S62Z | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB | Texas Instruments | LBSS123LT3G vs MMBF5103S62Z |
TN0624N3 | Small Signal Field-Effect Transistor, 0.4A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Supertex Inc | LBSS123LT3G vs TN0624N3 |
RUE003N02TL | Small Signal Field-Effect Transistor, 0.3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EMT3, 3 PIN | ROHM Semiconductor | LBSS123LT3G vs RUE003N02TL |
2N7002KA | Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | KEC | LBSS123LT3G vs 2N7002KA |
2N7002-T1-E3 | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, SOT-23, 3 PIN | Vishay Intertechnologies | LBSS123LT3G vs 2N7002-T1-E3 |
PN4857 | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 | Texas Instruments | LBSS123LT3G vs PN4857 |
MPF4858 | Small Signal Field-Effect Transistor, 40V, 1-Element, N-Channel, Silicon, Junction FET, TO-92 | Motorola Semiconductor Products | LBSS123LT3G vs MPF4858 |