Datasheets
LET9045F by: STMicroelectronics

RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs

Part Details for LET9045F by STMicroelectronics

Overview of LET9045F by STMicroelectronics

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Applications Consumer Electronics Renewable Energy

Price & Stock for LET9045F

Part # Distributor Description Stock Price Buy
DISTI # 39T6670
Newark Rf Power |Stmicroelectronics LET9045F Min Qty: 50 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
STMicroelectronics RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs RoHS: Compliant Min Qty: 1 0
  • 1 $74.4000
  • 10 $70.6900
  • 50 $70.2000
  • 100 $70.2000
  • 250 $70.2000
  • 500 $70.2000
$70.2000 / $74.4000 Buy Now
Chip1Cloud FET RF LDMOS 80V 9A M-250 740
RFQ
DISTI # 2341740
element14 Asia-Pacific   RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $94.7029
  • 10 $89.9762
  • 50 $89.3460
$89.3460 / $94.7029 Buy Now
DISTI # 2341740
Farnell MOSFET, RF, N-CH, 80V, 9A, M250-3 RoHS: Compliant Min Qty: 2500 Lead time: 30 Weeks, 1 Days Container: Each 0
  • 2,500 $68.3804
$68.3804 Buy Now
Perfect Parts Corporation   176
RFQ

Part Details for LET9045F

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LET9045F Part Data Attributes

LET9045F STMicroelectronics
Buy Now Datasheet
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LET9045F STMicroelectronics RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Package Description ROHS COMPLIANT, PLASTIC, M250, 2 PIN
Pin Count 2
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 9 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDFP-F2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 200 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLATPACK
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 108 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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