Datasheets
LET9045STR by: STMicroelectronics

45W 28V HF to 2GHz LDMOS TRANSISTOR in PSO-10RF plastic package

Part Details for LET9045STR by STMicroelectronics

Overview of LET9045STR by STMicroelectronics

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Applications Consumer Electronics Renewable Energy

Price & Stock for LET9045STR

Part # Distributor Description Stock Price Buy
DISTI # LET9045STR-ND
DigiKey RF MOSFET LDMOS 28V POWERSO-10RF Lead time: 54 Weeks Container: Tape & Reel (TR) Temporarily Out of Stock
Buy Now
DISTI # LET9045STR
Avnet Americas Power LDMOS Transistor N-Channel 80V 9A 3-Pin PowerSO-10RF T/R - Tape and Reel (Alt: LET9045STR) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Container: Reel 0
RFQ
DISTI # LET9045STR
Avnet Americas Power LDMOS Transistor N-Channel 80V 9A 3-Pin PowerSO-10RF T/R - Tape and Reel (Alt: LET9045STR) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Container: Reel 0
RFQ
DISTI # LET9045STR
Avnet Americas Power LDMOS Transistor N-Channel 80V 9A 3-Pin PowerSO-10RF T/R - Tape and Reel (Alt: LET9045STR) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Container: Reel 0
RFQ

Part Details for LET9045STR

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LET9045STR Part Data Attributes

LET9045STR STMicroelectronics
Buy Now Datasheet
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LET9045STR STMicroelectronics 45W 28V HF to 2GHz LDMOS TRANSISTOR in PSO-10RF plastic package
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Part Package Code SOT
Package Description PLASTIC, POWERSO-10R, SMD, 2 PIN
Pin Count 10
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 9 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-F2
JESD-609 Code e3
Moisture Sensitivity Level 3
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 165 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 250
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 160 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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