Datasheets
LET9120 by: STMicroelectronics

RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs

Part Details for LET9120 by STMicroelectronics

Overview of LET9120 by STMicroelectronics

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Applications Energy and Power Systems Renewable Energy Automotive

Price & Stock for LET9120

Part # Distributor Description Stock Price Buy
STMicroelectronics RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs RoHS: Compliant Min Qty: 1 0
  • 60 $164.5600
$164.5600 Buy Now
DISTI # LET9120
TME Transistor: N-MOSFET, unipolar, RF, 80V, 18A, 200W, M246, Pout: 150W Min Qty: 1 0
  • 1 $210.1100
  • 3 $180.0900
  • 10 $164.0100
  • 20 $153.2900
$153.2900 / $210.1100 RFQ

Part Details for LET9120

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LET9120 Part Data Attributes

LET9120 STMicroelectronics
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LET9120 STMicroelectronics RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Package Description ROHS COMPLIANT, PLASTIC, M246, 4 PIN
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 18 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band L BAND
JESD-30 Code R-PDFM-F4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 200 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 200 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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