Part Details for MGFS45V2123A by Mitsubishi Electric
Overview of MGFS45V2123A by Mitsubishi Electric
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for MGFS45V2123A
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 1 |
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RFQ | ||
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Quest Components | 1 |
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$375.0000 | Buy Now |
Part Details for MGFS45V2123A
MGFS45V2123A CAD Models
MGFS45V2123A Part Data Attributes:
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MGFS45V2123A
Mitsubishi Electric
Buy Now
Datasheet
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Compare Parts:
MGFS45V2123A
Mitsubishi Electric
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-51, 2 PIN
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
Package Description | FLANGE MOUNT, R-CDFM-F2 | |
Pin Count | 2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.75 | |
Additional Feature | HIGH RELIABILITY | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 10 V | |
Drain Current-Max (ID) | 6.5 A | |
FET Technology | JUNCTION | |
Highest Frequency Band | S BAND | |
JESD-30 Code | R-CDFM-F2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | DEPLETION MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 88 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | GALLIUM ARSENIDE |
Alternate Parts for MGFS45V2123A
This table gives cross-reference parts and alternative options found for MGFS45V2123A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MGFS45V2123A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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MGFS45V2123 | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-38, 2 PIN | Mitsubishi Electric | MGFS45V2123A vs MGFS45V2123 |