Datasheets
MJ10012 by:

Bipolar Transistor; Package/Case:TO-3; Current Rating:10A; Voltage Rating:600V

Part Details for MJ10012 by NTE Electronics Inc

Overview of MJ10012 by NTE Electronics Inc

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Price & Stock for MJ10012

Part # Distributor Description Stock Price Buy
DISTI # 06M7347
Newark Bipolar Transistor, Npn, 400V, To-3, Transistor Polarity:Npn, No. Of Pins:2Pins, Transistor Mounting:Through Hole, Operating Temperature Max:200°C, Product Range:-, Qualification:-, Collector Emitter Voltage Max:400V Rohs Compliant: Yes |Nte Electronics MJ10012 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
Bristol Electronics   11
RFQ
DISTI # MJ10012-NTE
TME Transistor: NPN, bipolar, Darlington, 400V, 10A, 175W, TO3 Min Qty: 1 40
  • 1 $8.2200
  • 3 $7.2600
  • 10 $6.5300
$6.5300 / $8.2200 Buy Now
DISTI # 1611444
element14 Asia-Pacific TRANSISTOR RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $11.7169
  • 5 $9.6332
  • 10 $7.8724
  • 50 $7.2854
  • 100 $6.6031
  • 250 $6.4711
$6.4711 / $11.7169 Buy Now
DISTI # 1611444
Farnell TRANSISTOR RoHS: Compliant Min Qty: 1 Lead time: 7 Weeks, 1 Days Container: Each 0
  • 1 $16.5920
  • 5 $12.0965
  • 10 $10.7316
  • 50 $9.2540
  • 100 $8.3649
  • 250 $7.0125
$7.0125 / $16.5920 Buy Now

Part Details for MJ10012

MJ10012 CAD Models

MJ10012 Part Data Attributes

MJ10012 NTE Electronics Inc
Buy Now Datasheet
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MJ10012 NTE Electronics Inc Bipolar Transistor; Package/Case:TO-3; Current Rating:10A; Voltage Rating:600V
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer NTE ELECTRONICS INC
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer NTE ELECTRONICS
Case Connection COLLECTOR
Collector Current-Max (IC) 10 A
Collector-Base Capacitance-Max 350 pF
Collector-Emitter Voltage-Max 400 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 20
JEDEC-95 Code TO-3
JESD-30 Code O-MBFM-P2
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 200 °C
Operating Temperature-Min -65 °C
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 175 W
Surface Mount NO
Terminal Form PIN/PEG
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
VCEsat-Max 2.5 V

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