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Bipolar Transistor; Package/Case:TO-3; Current Rating:10A; Voltage Rating:600V
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
06M7347
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Newark | Bipolar Transistor, Npn, 400V, To-3, Transistor Polarity:Npn, No. Of Pins:2Pins, Transistor Mounting:Through Hole, Operating Temperature Max:200°C, Product Range:-, Qualification:-, Collector Emitter Voltage Max:400V Rohs Compliant: Yes |Nte Electronics MJ10012 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
Buy Now | |
|
Bristol Electronics | 11 |
|
RFQ | ||
DISTI #
MJ10012-NTE
|
TME | Transistor: NPN, bipolar, Darlington, 400V, 10A, 175W, TO3 Min Qty: 1 | 40 |
|
$6.5300 / $8.2200 | Buy Now |
DISTI #
1611444
|
element14 Asia-Pacific | TRANSISTOR RoHS: Compliant Min Qty: 1 Container: Each | 0 |
|
$6.4711 / $11.7169 | Buy Now |
DISTI #
1611444
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Farnell | TRANSISTOR RoHS: Compliant Min Qty: 1 Lead time: 7 Weeks, 1 Days Container: Each | 0 |
|
$7.0125 / $16.5920 | Buy Now |
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MJ10012
NTE Electronics Inc
Buy Now
Datasheet
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Compare Parts:
MJ10012
NTE Electronics Inc
Bipolar Transistor; Package/Case:TO-3; Current Rating:10A; Voltage Rating:600V
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | NTE ELECTRONICS INC | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | NTE ELECTRONICS | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 10 A | |
Collector-Base Capacitance-Max | 350 pF | |
Collector-Emitter Voltage-Max | 400 V | |
Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
DC Current Gain-Min (hFE) | 20 | |
JEDEC-95 Code | TO-3 | |
JESD-30 Code | O-MBFM-P2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 200 °C | |
Operating Temperature-Min | -65 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 175 W | |
Surface Mount | NO | |
Terminal Form | PIN/PEG | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
VCEsat-Max | 2.5 V |