Part Details for MJD112T4 by Motorola Semiconductor Products
Overview of MJD112T4 by Motorola Semiconductor Products
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for MJD112T4
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 1225 |
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RFQ | ||
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Quest Components | Bipolar Junction Transistor, Darlington, NPN Type, TO-252 | 65 |
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$0.3000 / $0.3600 | Buy Now |
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Quest Components | Bipolar Junction Transistor, Darlington, NPN Type, TO-252 | 280 |
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$0.3000 / $0.6000 | Buy Now |
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Quest Components | Bipolar Junction Transistor, Darlington, NPN Type, TO-252 | 3216 |
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$0.1702 / $0.6545 | Buy Now |
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Quest Components | Bipolar Junction Transistor, Darlington, NPN Type, TO-252 | 129 |
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$0.3273 / $0.6545 | Buy Now |
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Quest Components | Bipolar Junction Transistor, Darlington, NPN Type, TO-252 | 852 |
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$0.2400 / $0.6000 | Buy Now |
Part Details for MJD112T4
MJD112T4 CAD Models
MJD112T4 Part Data Attributes
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MJD112T4
Motorola Semiconductor Products
Buy Now
Datasheet
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MJD112T4
Motorola Semiconductor Products
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MOTOROLA INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 2 A | |
| Collector-Base Capacitance-Max | 100 pF | |
| Collector-Emitter Voltage-Max | 100 V | |
| Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
| DC Current Gain-Min (hFE) | 200 | |
| JESD-30 Code | R-PDSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 20 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 25 MHz | |
| VCEsat-Max | 3 V |