Datasheets
MJD127T4 by:

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

Part Details for MJD127T4 by Motorola Semiconductor Products

Overview of MJD127T4 by Motorola Semiconductor Products

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Applications Industrial Automation

Price & Stock for MJD127T4

Part # Distributor Description Stock Price Buy
Bristol Electronics   2380
RFQ

Part Details for MJD127T4

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MJD127T4 Part Data Attributes

MJD127T4 Motorola Semiconductor Products
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MJD127T4 Motorola Semiconductor Products Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
Part Life Cycle Code Transferred
Ihs Manufacturer MOTOROLA INC
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection COLLECTOR
Collector Current-Max (IC) 8 A
Collector-Base Capacitance-Max 300 pF
Collector-Emitter Voltage-Max 100 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 100
JESD-30 Code R-PDSO-G2
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type PNP
Power Dissipation Ambient-Max 20 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 4 MHz
Turn-off Time-Max (toff) 3500 ns
VCEsat-Max 4 V

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