Datasheets
MJD45H11 by:

Power Bipolar Transistor,

Part Details for MJD45H11 by Rectron Semiconductor

Overview of MJD45H11 by Rectron Semiconductor

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for MJD45H11

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MJD45H11 Part Data Attributes:

MJD45H11 Rectron Semiconductor
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MJD45H11 Rectron Semiconductor Power Bipolar Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer RECTRON LTD
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Collector Current-Max (IC) 8 A
Collector-Emitter Voltage-Max 80 V
Configuration SINGLE
DC Current Gain-Min (hFE) 40
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type PNP
Power Dissipation Ambient-Max 20 W
Power Dissipation-Max (Abs) 20 W
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 10 MHz
VCEsat-Max 1.5 V

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