Datasheets
MJE18004D2G by: onsemi

High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network, TO-220 3 LEAD STANDARD, 50-TUBE

Part Details for MJE18004D2G by onsemi

Overview of MJE18004D2G by onsemi

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Applications Industrial Automation Motor control systems

Part Details for MJE18004D2G

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MJE18004D2G Part Data Attributes

MJE18004D2G onsemi
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MJE18004D2G onsemi High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network, TO-220 3 LEAD STANDARD, 50-TUBE
Pbfree Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ON SEMICONDUCTOR
Part Package Code TO-220 3 LEAD STANDARD
Package Description ROHS COMPLIANT, CASE 221A-09, 3 PIN
Pin Count 3
Manufacturer Package Code 221A
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Additional Feature BUILT-IN EFFICIENT ANTISATURATION NETWORK
Case Connection COLLECTOR
Collector Current-Max (IC) 5 A
Collector-Emitter Voltage-Max 450 V
Configuration SINGLE WITH BUILT-IN DIODE
DC Current Gain-Min (hFE) 6
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 75 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 13 MHz

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