Part Details for MJE5731 by Motorola Semiconductor Products
Overview of MJE5731 by Motorola Semiconductor Products
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for MJE5731
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 5 |
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RFQ | ||
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Bristol Electronics | 69 |
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RFQ | ||
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Quest Components | Bipolar Junction Transistor, PNP Type, TO-220AB | 55 |
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$0.9750 / $1.9500 | Buy Now |
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Quest Components | Bipolar Junction Transistor, PNP Type, TO-220AB | 4 |
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$20.0000 / $22.5000 | Buy Now |
Part Details for MJE5731
MJE5731 CAD Models
MJE5731 Part Data Attributes:
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MJE5731
Motorola Semiconductor Products
Buy Now
Datasheet
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Compare Parts:
MJE5731
Motorola Semiconductor Products
Power Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MOTOROLA INC | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | LEADFORM OPTIONS ARE AVAILABLE | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 1 A | |
| Collector-Emitter Voltage-Max | 350 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 10 | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | PNP | |
| Power Dissipation Ambient-Max | 40 W | |
| Power Dissipation-Max (Abs) | 40 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 10 MHz | |
| VCEsat-Max | 1 V |