Transistors
MMDF1N05ER1
Description: 1A, 50V, 0.2ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, CASE 751-05, SOIC-8

Overview of MMDF1N05ER1 by Motorola Mobility LLC

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Education and Research Internet of Things (IoT) Computing and Data Storage Aerospace and Defense Healthcare Telecommunications Automotive

CAD Models for MMDF1N05ER1 by Motorola Mobility LLC
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Part Data Attributes for MMDF1N05ER1 by Motorola Mobility LLC

MMDF1N05ER1
Motorola Mobility LLC
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
MOTOROLA INC
Part Package Code
SOT
Package Description
SMALL OUTLINE, R-PDSO-G8
Pin Count
8
Manufacturer Package Code
CASE 751-05
Reach Compliance Code
unknown
ECCN Code
EAR99
Configuration
SEPARATE, 2 ELEMENTS
DS Breakdown Voltage-Min
50 V
Drain Current-Max (ID)
1 A
Drain-source On Resistance-Max
0.2 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
Number of Elements
2
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. MMDF1N05ER1
    Motorola Mobility LLC
    1A, 50V, 0.2ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, CASE 751-05, SOIC-8
    VS

Alternate Parts for MMDF1N05ER1

This table gives cross-reference parts and alternative options found for MMDF1N05ER1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMDF1N05ER1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MMDF1N05E 2A, 50V, 0.5ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Motorola Mobility LLC MMDF1N05ER1 vs MMDF1N05E
MMDF1N05ER2 2A, 50V, 0.5ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SO-8 Motorola Mobility LLC MMDF1N05ER1 vs MMDF1N05ER2
MMDF1N05ER2 Power MOSFET 50V 2A 300 mOhm Dual N-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL onsemi MMDF1N05ER1 vs MMDF1N05ER2
Part Number Description Manufacturer Compare
IRF7102TR Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier MMDF1N05ER1 vs IRF7102TR
NDS9959 Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation MMDF1N05ER1 vs NDS9959
RF1K4915496 Power Field-Effect Transistor, 2A I(D), 60V, 0.15ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, Harris Semiconductor MMDF1N05ER1 vs RF1K4915496
IRF7103 Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG MMDF1N05ER1 vs IRF7103
NDS9959_NL Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation MMDF1N05ER1 vs NDS9959_NL
BSO615NG 2.6A, 60V, 0.15ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SO-8 Rochester Electronics LLC MMDF1N05ER1 vs BSO615NG
NDS9957 Power Field-Effect Transistor, 2.6A I(D), 60V, 0.16ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation MMDF1N05ER1 vs NDS9957
MMDF1N05EG Power Field-Effect Transistor, 2A I(D), 50V, 0.5ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8 Motorola Semiconductor Products MMDF1N05ER1 vs MMDF1N05EG
MMDF1N05ER2 Power MOSFET 50V 2A 300 mOhm Dual N-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL onsemi MMDF1N05ER1 vs MMDF1N05ER2
IRF7103TRPBF Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, Infineon Technologies AG MMDF1N05ER1 vs IRF7103TRPBF

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