Part Details for MMDF2N02E by Motorola Mobility LLC
Overview of MMDF2N02E by Motorola Mobility LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for MMDF2N02E
MMDF2N02E CAD Models
MMDF2N02E Part Data Attributes
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MMDF2N02E
Motorola Mobility LLC
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Datasheet
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MMDF2N02E
Motorola Mobility LLC
3.6A, 25V, 0.1ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, CASE 751-05, SOIC-8
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MOTOROLA INC | |
Part Package Code | SOT | |
Package Description | SMALL OUTLINE, R-PDSO-G8 | |
Pin Count | 8 | |
Manufacturer Package Code | CASE 751-05 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 245 mJ | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 25 V | |
Drain Current-Max (ID) | 3.6 A | |
Drain-source On Resistance-Max | 0.1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e0 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.5 W | |
Pulsed Drain Current-Max (IDM) | 18 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 140 ns | |
Turn-on Time-Max (ton) | 40 ns |
Alternate Parts for MMDF2N02E
This table gives cross-reference parts and alternative options found for MMDF2N02E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMDF2N02E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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MMDF3N02HD | 3.8A, 20V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 751-05, SOIC-8 | Motorola Mobility LLC | MMDF2N02E vs MMDF3N02HD |
IRF7416TRPBF | Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | MMDF2N02E vs IRF7416TRPBF |
IRF7313TRPBF | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | International Rectifier | MMDF2N02E vs IRF7313TRPBF |
IRF7404PBF-1 | Power Field-Effect Transistor, | International Rectifier | MMDF2N02E vs IRF7404PBF-1 |
HP4936DY | 5.8A, 30V, 0.037ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SO-8 | Rochester Electronics LLC | MMDF2N02E vs HP4936DY |
IRF7303TRPBF | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | International Rectifier | MMDF2N02E vs IRF7303TRPBF |
IRF7416GPBF | Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 | International Rectifier | MMDF2N02E vs IRF7416GPBF |
FDS4935A | Power Field-Effect Transistor, 7A I(D), 30V, 0.023ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | MMDF2N02E vs FDS4935A |
934055451118 | TRANSISTOR 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SMD, SO-8, FET General Purpose Power | NXP Semiconductors | MMDF2N02E vs 934055451118 |
IRF7303PBF | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | MMDF2N02E vs IRF7303PBF |