Parametric results for: MMDF2N02E under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 7

11 hits Apply

245.0 mJ 7 800.0 mJ 2

Min (mJ) - Max (mJ)

11 hits Apply

Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 9

11 hits Apply

DS Breakdown Voltage-Min (2)

20 V 2 25 V 7

Min (V) - Max (V)

11 hits Apply

Drain Current-Max (Abs) (ID) (2)

2.2 A 1 3.6 A 1

Min (A) - Max (A)

11 hits Apply

Drain Current-Max (ID) (2)

2.2 A 2 3.6 A 8

Min (A) - Max (A)

11 hits Apply

Drain-source On Resistance-Max (1)

100 mΩ 9

11 hits Apply

METAL-OXIDE SEMICONDUCTOR 11

11 hits Apply

R-PDSO-G8 9

11 hits Apply

e0 6 e3 1

11 hits Apply

Manufacturer (4)

Freescale Semiconductor 2 Motorola Mobility LLC 3 Motorola Semiconductor Products 3 onsemi 3

11 hits Apply

1 2

11 hits Apply

Number of Elements (1)

2 9

11 hits Apply

Number of Terminals (1)

8 9

11 hits Apply

ENHANCEMENT MODE 11

11 hits Apply

150.0 °C 11

11 hits Apply

PLASTIC/EPOXY 9

11 hits Apply

RECTANGULAR 9

11 hits Apply

SMALL OUTLINE 9

11 hits Apply

Obsolete 9 Transferred 2

11 hits Apply

No 2 Yes 1

11 hits Apply

235 1 260 1 NOT SPECIFIED 1

11 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 11

11 hits Apply

1.5 W 3 2 W 4

Min (W) - Max (W)

11 hits Apply

Surface Mount (1)

YES 11

11 hits Apply