Datasheets
MMRF1306HR5 by:

RF POWER, FET

Part Details for MMRF1306HR5 by NXP Semiconductors

Overview of MMRF1306HR5 by NXP Semiconductors

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Applications Consumer Electronics

Price & Stock for MMRF1306HR5

Part # Distributor Description Stock Price Buy
DISTI # 45X4982
Newark Lateral N-Channel Broadband Rf Power Mosfet, 10-500 Mhz, 1000 W, 50 V/ Reel Rohs Compliant: Yes |Nxp MMRF1306HR5 Min Qty: 50 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 25 $172.1500
$172.1500 Buy Now
DISTI # MMRF1306HR5CT-ND
DigiKey RF MOSFET LDMOS 50V NI1230 Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) Temporarily Out of Stock
  • 1 $188.4600
  • 50 $176.5176
$176.5176 / $188.4600 Buy Now
DISTI # MMRF1306HR5
Avnet Americas Transistor RF FET N-CH 133V 1.8MHz to 600MHz 4-Pin NI-1230H T/R - Tape and Reel (Alt: MMRF1306HR5) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 10 Weeks, 0 Days Container: Reel 0
  • 50 $187.9106
  • 100 $183.9684
  • 200 $178.7122
  • 300 $176.0840
  • 400 $172.1419
  • 500 $168.1997
  • 5,000 $162.9434
$162.9434 / $187.9106 Buy Now
DISTI # 841-MMRF1306HR5
Mouser Electronics RF MOSFET Transistors MOSFET 10-500 MHz 1000 W 50 V RoHS: Compliant 0
  • 50 $173.1500
$173.1500 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Reel 0
Reel
  • 50 $160.2600
$160.2600 Buy Now
DISTI # MMRF1306HR5
Avnet Silica Transistor RF FET N-CH 133V 1.8MHz to 600MHz 4-Pin NI-1230H T/R (Alt: MMRF1306HR5) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 12 Weeks, 0 Days Silica - 0
Buy Now

Part Details for MMRF1306HR5

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MMRF1306HR5 Part Data Attributes:

MMRF1306HR5 NXP Semiconductors
Buy Now Datasheet
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MMRF1306HR5 NXP Semiconductors RF POWER, FET
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer NXP SEMICONDUCTORS
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00
Factory Lead Time 10 Weeks
Case Connection SOURCE
Configuration SEPARATE, 2 ELEMENTS
DS Breakdown Voltage-Min 133 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 2.8 pF
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-CDFM-F4
Number of Elements 2
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 225 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Gain-Min (Gp) 23 dB
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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