Part Details for MRF173CQ by MACOM
Overview of MRF173CQ by MACOM
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for MRF173CQ
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
1465-1165-ND
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DigiKey | RF MOSFET 28V 316-01 Lead time: 14 Weeks Container: Tray | Temporarily Out of Stock |
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Buy Now | |
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DISTI #
MRF173CQ
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Richardson RFPD | RF POWER TRANSISTOR RoHS: Compliant Min Qty: 1 | 0 |
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RFQ |
Part Details for MRF173CQ
MRF173CQ CAD Models
MRF173CQ Part Data Attributes
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MRF173CQ
MACOM
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Datasheet
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Compare Parts:
MRF173CQ
MACOM
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 316-01, 6 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | M/A-COM TECHNOLOGY SOLUTIONS INC | |
| Package Description | CASE 316-01, 6 PIN | |
| Pin Count | 6 | |
| Manufacturer Package Code | CASE 316-01 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | MACOM | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 65 V | |
| Drain Current-Max (ID) | 9 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
| JESD-30 Code | O-CXFM-F4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 220 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | UNSPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for MRF173CQ
This table gives cross-reference parts and alternative options found for MRF173CQ. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MRF173CQ, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BLF147,112 | BLF147 | NXP Semiconductors | MRF173CQ vs BLF147,112 |
| MRF140 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET | Motorola Mobility LLC | MRF173CQ vs MRF140 |
| DU2860T | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET | TE Connectivity | MRF173CQ vs DU2860T |
| DU2880V | RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, | MACOM | MRF173CQ vs DU2880V |
| MRF173 | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.380 INCH, FM-4 | Advanced Semiconductor Inc | MRF173CQ vs MRF173 |
| BLF346 | TRANSISTOR VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, FM-6, FET RF Power | NXP Semiconductors | MRF173CQ vs BLF346 |
| BLF246 | RF Power Field-Effect Transistor, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.380 INCH, FM-4 | Advanced Semiconductor Inc | MRF173CQ vs BLF246 |
| MRF140 | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 211-11, 4 PIN | MACOM | MRF173CQ vs MRF140 |
| BLF246,112 | BLF246 | NXP Semiconductors | MRF173CQ vs BLF246,112 |
| DU2880T | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, | MACOM | MRF173CQ vs DU2880T |