Part Details for MRF8P20140WGHSR3 by NXP Semiconductors
Overview of MRF8P20140WGHSR3 by NXP Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Audio and Video Systems
Price & Stock for MRF8P20140WGHSR3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
45X5016
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Newark | Single W-Cdma Lateral N-Channel Rf Power Mosfet, 1880-2025 Mhz, 24 W Avg., 28 V/Reel Rohs Compliant: Yes |Nxp MRF8P20140WGHSR3 RoHS: Compliant Min Qty: 250 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Part Details for MRF8P20140WGHSR3
MRF8P20140WGHSR3 CAD Models
MRF8P20140WGHSR3 Part Data Attributes
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MRF8P20140WGHSR3
NXP Semiconductors
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MRF8P20140WGHSR3
NXP Semiconductors
RF POWER, FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Package Description | , | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00 | |
| Configuration | SEPARATE, 2 ELEMENTS | |
| DS Breakdown Voltage-Min | 65 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | S BAND | |
| Number of Elements | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 125 °C | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 140 W | |
| Surface Mount | YES | |
| Time@Peak Reflow Temperature-Max (s) | 40 |