Part Details for MRFE6VP5150GNR1 by NXP Semiconductors
Overview of MRFE6VP5150GNR1 by NXP Semiconductors
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Audio and Video Systems
Price & Stock for MRFE6VP5150GNR1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
85AC2003
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Newark | Rf Fet, 139V, 952W, 600Mhz, To-270Wbg, Drain Source Voltage Vds:139V, Continuous Drain Current Id:-, Power Dissipation Pd:952W, Operating Frequency Min:1.8Mhz, Operating Frequency Max:600Mhz, Rf Transistor Case:To-270Wb, No. Of Rohs Compliant: Yes |Nxp MRFE6VP5150GNR1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 1321 |
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$32.3000 | Buy Now |
DISTI #
67X4471
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Newark | Rf Fet, 139V, 952W, 600Mhz, To-270Wbg, Drain Source Voltage Vds:139V, Continuous Drain Current Id:-, Power Dissipation:952W, Operating Frequency Min:1.8Mhz, Operating Frequency Max:600Mhz, No. Of Pins:4Pins, Channel Type:N Channel Rohs Compliant: Yes |Nxp MRFE6VP5150GNR1 Min Qty: 500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$30.0100 | Buy Now |
DISTI #
MRFE6VP5150GNR1CT-ND
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DigiKey | RF MOSFET LDMOS 50V TO270-4 Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
496 In Stock |
|
$29.6367 / $39.8900 | Buy Now |
DISTI #
MRFE6VP5150GNR1
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Avnet Americas | RF Components - Tape and Reel (Alt: MRFE6VP5150GNR1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
|
$27.3576 / $31.5495 | Buy Now |
DISTI #
841-MRFE6VP5150GNR1
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Mouser Electronics | RF MOSFET Transistors 1.8--600 MHz 150 W CW 50 V RoHS: Compliant | 0 |
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$29.6300 | Order Now |
DISTI #
V72:2272_07204224
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Arrow Electronics | Trans RF MOSFET N-CH 133V 5-Pin TO-270 W GULL T/R Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2206 Container: Cut Strips | Americas - 210 |
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$28.2900 / $29.7300 | Buy Now |
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Rochester Electronics | Wideband RF Power LDMOS Transistor RoHS: Compliant Status: Active Min Qty: 1 | 475 |
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$30.0800 / $35.3900 | Buy Now |
DISTI #
MRFE6VP5150GNR1
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Avnet Americas | RF Components - Tape and Reel (Alt: MRFE6VP5150GNR1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
|
$27.3576 / $31.5495 | Buy Now |
DISTI #
MRFE6VP5150GNR1
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Richardson RFPD | RF POWER TRANSISTOR RoHS: Compliant Min Qty: 1 | 500 |
|
$32.1500 / $35.7200 | Buy Now |
DISTI #
MRFE6VP5150GNR1
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Avnet Silica | RF Components (Alt: MRFE6VP5150GNR1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 12 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for MRFE6VP5150GNR1
MRFE6VP5150GNR1 CAD Models
MRFE6VP5150GNR1 Part Data Attributes:
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MRFE6VP5150GNR1
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
MRFE6VP5150GNR1
NXP Semiconductors
RF POWER, FET
|
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Package Description | TO-270WBG, 4 PIN | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00 | |
Factory Lead Time | 10 Weeks | |
Samacsys Manufacturer | NXP | |
Case Connection | SOURCE | |
Configuration | COMMON SOURCE, 2 ELEMENTS | |
DS Breakdown Voltage-Min | 133 V | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
JEDEC-95 Code | TO-270BB | |
JESD-30 Code | R-PDFM-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 3 | |
Number of Elements | 2 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |