Datasheets
MRFE6VS25GNR1 by:

RF POWER, FET

Part Details for MRFE6VS25GNR1 by NXP Semiconductors

Overview of MRFE6VS25GNR1 by NXP Semiconductors

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Applications Consumer Electronics Industrial Automation

Price & Stock for MRFE6VS25GNR1

Part # Distributor Description Stock Price Buy
DISTI # 568-MRFE6VS25GNR1CT-ND
DigiKey RF MOSFET LDMOS 50V TO270-2 Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) Limited Supply - Call
Buy Now
DISTI # MRFE6VS25GNR1
Avnet Americas Transistor RF FET N-CH 133V 1.8MHz to 2000MHz 2-Pin TO-270 T/R - Tape and Reel (Alt: MRFE6VS25GNR1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 10 Weeks, 0 Days Container: Reel 0
  • 500 $27.2820
  • 1,000 $26.7096
  • 2,000 $25.9465
  • 3,000 $25.5649
  • 4,000 $24.9926
  • 5,000 $24.4202
  • 50,000 $23.6571
$23.6571 / $27.2820 Buy Now
Future Electronics MRFE6VS Series 133 V 512 MHz RF Power LDMOS Transistor - TO-270-2 GULL RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Container: Reel 0
Reel
  • 500 $26.7500
$26.7500 Buy Now
Future Electronics MRFE6VS Series 133 V 512 MHz RF Power LDMOS Transistor - TO-270-2 GULL RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Container: Reel 0
Reel
  • 500 $26.7500
$26.7500 Buy Now
DISTI # MRFE6VS25GNR1
Avnet Americas Transistor RF FET N-CH 133V 1.8MHz to 2000MHz 2-Pin TO-270 T/R - Tape and Reel (Alt: MRFE6VS25GNR1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 10 Weeks, 0 Days Container: Reel 0
  • 500 $27.2820
  • 1,000 $26.7096
  • 2,000 $25.9465
  • 3,000 $25.5649
  • 4,000 $24.9926
  • 5,000 $24.4202
  • 50,000 $23.6571
$23.6571 / $27.2820 Buy Now
DISTI # MRFE6VS25GNR1
Avnet Americas Transistor RF FET N-CH 133V 1.8MHz to 2000MHz 2-Pin TO-270 T/R - Tape and Reel (Alt: MRFE6VS25GNR1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 10 Weeks, 0 Days Container: Reel 0
  • 500 $27.2820
  • 1,000 $26.7096
  • 2,000 $25.9465
  • 3,000 $25.5649
  • 4,000 $24.9926
  • 5,000 $24.4202
  • 50,000 $23.6571
$23.6571 / $27.2820 Buy Now
DISTI # MRFE6VS25GNR1
Avnet Silica Transistor RF FET N-CH 133V 1.8MHz to 2000MHz 2-Pin TO-270 T/R (Alt: MRFE6VS25GNR1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 1 Weeks, 5 Days Silica - 0
Buy Now
DISTI # MRFE6VS25GNR1
EBV Elektronik Transistor RF FET N-CH 133V 1.8MHz to 2000MHz 2-Pin TO-270 T/R (Alt: MRFE6VS25GNR1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 1 Weeks, 5 Days EBV - 0
Buy Now

Part Details for MRFE6VS25GNR1

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MRFE6VS25GNR1 Part Data Attributes

MRFE6VS25GNR1 NXP Semiconductors
Buy Now Datasheet
Compare Parts:
MRFE6VS25GNR1 NXP Semiconductors RF POWER, FET
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer NXP SEMICONDUCTORS
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00
Factory Lead Time 10 Weeks
Samacsys Manufacturer NXP
Configuration SINGLE
DS Breakdown Voltage-Min 133 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDFM-F2
JESD-609 Code e3
Moisture Sensitivity Level 3
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 25 W
Power Gain-Min (Gp) 24.5 dB
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40

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