Transistors
MSC2712YT1G
onsemi
Description: NPN Bipolar Transistor, SC-59 3 LEAD, 3000-REEL

Overview of MSC2712YT1G by onsemi

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Automotive Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

Price & Stock for MSC2712YT1G by onsemi

Part # Manufacturer Description Stock Price Buy
DISTI # 73AK7376
Newark Msc2712Yt1G, Single Bipolar Transistors |Onsemi MSC2712YT1G RoHS: Not Compliant Min Qty: 16030 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 5,000 $0.0340
$0.0340 Buy Now
DISTI # MSC2712YT1G
Avnet Americas SS SC59 GP XSTR NPN 45V - Tape and Reel (Alt: MSC2712YT1G) RoHS: Compliant Min Qty: 13889 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel 975000 Partner Stock
  • 13,889 $0.0266
  • 14,000 $0.0259
  • 28,000 $0.0252
  • 70,000 $0.0245
  • 140,000 $0.0238
  • 700,000 $0.0230
  • 1,400,000 $0.0223
$0.0223 / $0.0266 Buy Now
Rochester Electronics Small Signal Bipolar Transistor, 0.1A, 50V, NPN ' RoHS: Compliant Status: Obsolete Min Qty: 1 975000
  • 1 $0.0263
  • 25 $0.0258
  • 100 $0.0247
  • 500 $0.0237
  • 1,000 $0.0224
$0.0224 / $0.0263 Buy Now

CAD Models for MSC2712YT1G by onsemi
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Part Data Attributes for MSC2712YT1G by onsemi

MSC2712YT1G
onsemi
-
-
Pbfree Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
ONSEMI
Part Package Code
SC-59 3 LEAD
Package Description
LEAD FREE, CASE 318D-04, SC-59, 3 PIN
Pin Count
3
Manufacturer Package Code
318D-04
Reach Compliance Code
unknown
ECCN Code
EAR99
Factory Lead Time
4 Weeks
Samacsys Manufacturer
onsemi
Collector Current-Max (IC)
0.1 A
Collector-Emitter Voltage-Max
50 V
Configuration
SINGLE
DC Current Gain-Min (hFE)
120
JESD-30 Code
R-PDSO-G3
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
3
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
NPN
Power Dissipation-Max (Abs)
0.2 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
TIN
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
Transition Frequency-Nom (fT)
50 MHz
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  1. MSC2712YT1G
    onsemi
    NPN Bipolar Transistor, SC-59 3 LEAD, 3000-REEL
    VS

Alternate Parts for MSC2712YT1G

This table gives cross-reference parts and alternative options found for MSC2712YT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MSC2712YT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
FJX3008RTF NPN Epitaxial Silicon Transistor with Bias Resistor, 3000-REEL onsemi MSC2712YT1G vs FJX3008RTF
MUN5111DW1T1G Dual PNP Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL onsemi MSC2712YT1G vs MUN5111DW1T1G
PDTA144TE,115 PDTA144T series - PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = open SC-75 3-Pin NXP Semiconductors MSC2712YT1G vs PDTA144TE,115
MUN2237T1G NPN Bipolar Digital Transistor (BRT), SC-59 3 LEAD, 3000-REEL onsemi MSC2712YT1G vs MUN2237T1G
BCR183E6327HTSA1 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, Infineon Technologies AG MSC2712YT1G vs BCR183E6327HTSA1
RN2301(TE85L,F) TRANSISTOR PNP 50V 0.1A SC-70 Toshiba America Electronic Components MSC2712YT1G vs RN2301(TE85L,F)
RN2401S,LF(D X34 PB-F SOT-23 PLN (LF) TRANSISTOR PD=200MW F=250MHZ Toshiba America Electronic Components MSC2712YT1G vs RN2401S,LF(D
BCR169S Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, SOT-363, 6 PIN Infineon Technologies AG MSC2712YT1G vs BCR169S
BCR183E6433HTMA1 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon Infineon Technologies AG MSC2712YT1G vs BCR183E6433HTMA1
MUN2237T1 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 318D-04, SC-59, 3 PIN onsemi MSC2712YT1G vs MUN2237T1

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