There are no models available for this part yet.
Overview of MSC2712YT1G by onsemi
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 3 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Automotive
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Price & Stock for MSC2712YT1G by onsemi
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
73AK7376
|
Newark | Msc2712Yt1G, Single Bipolar Transistors |Onsemi MSC2712YT1G RoHS: Not Compliant Min Qty: 16030 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$0.0340 | Buy Now | |
DISTI #
MSC2712YT1G
|
Avnet Americas | SS SC59 GP XSTR NPN 45V - Tape and Reel (Alt: MSC2712YT1G) RoHS: Compliant Min Qty: 13889 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 975000 Partner Stock |
|
$0.0223 / $0.0266 | Buy Now | |
Rochester Electronics | Small Signal Bipolar Transistor, 0.1A, 50V, NPN ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 975000 |
|
$0.0224 / $0.0263 | Buy Now |
CAD Models for MSC2712YT1G by onsemi
Part Data Attributes for MSC2712YT1G by onsemi
|
|
---|---|
Pbfree Code
|
Yes
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
ONSEMI
|
Part Package Code
|
SC-59 3 LEAD
|
Package Description
|
LEAD FREE, CASE 318D-04, SC-59, 3 PIN
|
Pin Count
|
3
|
Manufacturer Package Code
|
318D-04
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
Factory Lead Time
|
4 Weeks
|
Samacsys Manufacturer
|
onsemi
|
Collector Current-Max (IC)
|
0.1 A
|
Collector-Emitter Voltage-Max
|
50 V
|
Configuration
|
SINGLE
|
DC Current Gain-Min (hFE)
|
120
|
JESD-30 Code
|
R-PDSO-G3
|
JESD-609 Code
|
e3
|
Moisture Sensitivity Level
|
1
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel)
|
260
|
Polarity/Channel Type
|
NPN
|
Power Dissipation-Max (Abs)
|
0.2 W
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
YES
|
Terminal Finish
|
TIN
|
Terminal Form
|
GULL WING
|
Terminal Position
|
DUAL
|
Time@Peak Reflow Temperature-Max (s)
|
30
|
Transistor Application
|
AMPLIFIER
|
Transistor Element Material
|
SILICON
|
Transition Frequency-Nom (fT)
|
50 MHz
|
Alternate Parts for MSC2712YT1G
This table gives cross-reference parts and alternative options found for MSC2712YT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MSC2712YT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FJX3008RTF | NPN Epitaxial Silicon Transistor with Bias Resistor, 3000-REEL | onsemi | MSC2712YT1G vs FJX3008RTF |
MUN5111DW1T1G | Dual PNP Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL | onsemi | MSC2712YT1G vs MUN5111DW1T1G |
PDTA144TE,115 | PDTA144T series - PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = open SC-75 3-Pin | NXP Semiconductors | MSC2712YT1G vs PDTA144TE,115 |
MUN2237T1G | NPN Bipolar Digital Transistor (BRT), SC-59 3 LEAD, 3000-REEL | onsemi | MSC2712YT1G vs MUN2237T1G |
BCR183E6327HTSA1 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, | Infineon Technologies AG | MSC2712YT1G vs BCR183E6327HTSA1 |
RN2301(TE85L,F) | TRANSISTOR PNP 50V 0.1A SC-70 | Toshiba America Electronic Components | MSC2712YT1G vs RN2301(TE85L,F) |
RN2401S,LF(D | X34 PB-F SOT-23 PLN (LF) TRANSISTOR PD=200MW F=250MHZ | Toshiba America Electronic Components | MSC2712YT1G vs RN2401S,LF(D |
BCR169S | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, SOT-363, 6 PIN | Infineon Technologies AG | MSC2712YT1G vs BCR169S |
BCR183E6433HTMA1 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | Infineon Technologies AG | MSC2712YT1G vs BCR183E6433HTMA1 |
MUN2237T1 | 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 318D-04, SC-59, 3 PIN | onsemi | MSC2712YT1G vs MUN2237T1 |
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