Datasheets
MSCSM120AM08CT3AG by: Microchip Technology Inc

Power Field-Effect Transistor, 337A I(D), 1200V, 0.0078ohm, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET

Part Details for MSCSM120AM08CT3AG by Microchip Technology Inc

Overview of MSCSM120AM08CT3AG by Microchip Technology Inc

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Price & Stock for MSCSM120AM08CT3AG

Part # Distributor Description Stock Price Buy
DISTI # 78AH6518
Newark Pm-Mosfet-Sic-Sbd-Sp3F Rohs Compliant: Yes |Microchip MSCSM120AM08CT3AG Min Qty: 2 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $500.5900
  • 50 $414.7800
  • 100 $371.8700
  • 250 $357.5700
  • 500 $314.6600
$314.6600 / $500.5900 Buy Now
DISTI # 150-MSCSM120AM08CT3AG-ND
DigiKey SIC 2N-CH 1200V 337A SP3F Min Qty: 1 Lead time: 37 Weeks Container: Tube 11
In Stock
  • 1 $500.5900
$500.5900 Buy Now
DISTI # MSCSM120AM08CT3AG
Avnet Americas Transistor MOSFET Array Dual 1200V 337A Screw Mount - Bulk (Alt: MSCSM120AM08CT3AG) RoHS: Not Compliant Min Qty: 2 Package Multiple: 1 Lead time: 37 Weeks, 0 Days Container: Bulk 0
  • 1 $500.5900
  • 50 $414.7800
  • 100 $371.8700
  • 250 $357.5700
  • 500 $317.8333
$317.8333 / $500.5900 Buy Now
DISTI # 494-120AM08CT3AG
Mouser Electronics Discrete Semiconductor Modules CC3236 RoHS: Compliant 2
  • 1 $500.5900
$500.5900 Buy Now
DISTI # V99:2348_24577971
Arrow Electronics Phase Leg Sic Mosfet Power Module RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 37 Weeks Date Code: 2416 Americas - 10
  • 1 $447.0610
$447.0610 Buy Now
DISTI # MSCSM120AM08CT3AG
Microchip Technology Inc CC3236, Projected EOL: 2044-04-30 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $500.5900
  • 50 $414.7800
  • 100 $371.8700
  • 250 $357.5700
  • 500 $314.6600
  • 1,000 $286.0500
  • 5,000 $251.7300
$251.7300 / $500.5900 Buy Now
Future Electronics SiC Power MOSFET 1200 V 337A RoHS: Compliant pbFree: Yes Min Qty: 2 Package Multiple: 1 Container: Bulk 0
Bulk
  • 1 $509.5300
  • 4 $503.8100
  • 6 $500.5000
  • 8 $498.1600
  • 10 $490.7800
$490.7800 / $509.5300 Buy Now
Onlinecomponents.com   0
  • 1 $380.9000
  • 3 $365.8900
  • 5 $356.5000
  • 10 $351.1500
$351.1500 / $380.9000 Buy Now
DISTI # MSCSM120AM08CT3AG
Avnet Americas Transistor MOSFET Array Dual 1200V 337A Screw Mount - Bulk (Alt: MSCSM120AM08CT3AG) RoHS: Not Compliant Min Qty: 2 Package Multiple: 1 Lead time: 37 Weeks, 0 Days Container: Bulk 0
  • 1 $500.5900
  • 50 $414.7800
  • 100 $371.8700
  • 250 $357.5700
  • 500 $317.8333
$317.8333 / $500.5900 Buy Now
NAC MSCSM120AM08CT3AG RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Tube 2
  • 1 $408.6400
  • 100 $376.3800
  • 500 $357.5600
  • 800 $348.8400
$348.8400 / $408.6400 Buy Now
DISTI # MSCSM120AM08CT3
Richardson RFPD SILICON CARBIDE MOSFET MODULES RoHS: Compliant Min Qty: 2 3
  • 2 $386.4500
  • 25 $376.4800
$376.4800 / $386.4500 Buy Now
DISTI # MSCSM120AM08CT3AG
Avnet Silica Transistor MOSFET Array Dual 1200V 337A Screw Mount (Alt: MSCSM120AM08CT3AG) RoHS: Compliant Min Qty: 2 Package Multiple: 1 Lead time: 38 Weeks, 0 Days Silica - 0
Buy Now
DISTI # MSCSM120AM08CT3AG
EBV Elektronik Transistor MOSFET Array Dual 1200V 337A Screw Mount (Alt: MSCSM120AM08CT3AG) RoHS: Compliant Min Qty: 2 Package Multiple: 1 Lead time: 38 Weeks, 0 Days EBV - 0
Buy Now
Master Electronics   0
  • 1 $380.9000
  • 3 $365.8900
  • 5 $356.5000
  • 10 $351.1500
$351.1500 / $380.9000 Buy Now

Part Details for MSCSM120AM08CT3AG

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MSCSM120AM08CT3AG Part Data Attributes:

MSCSM120AM08CT3AG Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
MSCSM120AM08CT3AG Microchip Technology Inc Power Field-Effect Transistor, 337A I(D), 1200V, 0.0078ohm, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description MODULE-25
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.50.00.80
Factory Lead Time 37 Weeks
Case Connection ISOLATED
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 337 A
Drain-source On Resistance-Max 0.0078 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XUFM-X25
Number of Elements 2
Number of Terminals 25
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 675 A
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE

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