Parametric results for: MSCSM120AM08CT3AG under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Surface Mount

ISOLATED 1

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Configuration (1)

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR 1

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DS Breakdown Voltage-Min (1)

1.2 kV 1

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Drain Current-Max (ID) (1)

337 A 1

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Drain-source On Resistance-Max (1)

7.8 mΩ 1

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METAL-OXIDE SEMICONDUCTOR 1

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R-XUFM-X25 1

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Manufacturer (1)

Microchip Technology Inc 1

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Number of Elements (1)

2 1

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Number of Terminals (1)

25 1

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ENHANCEMENT MODE 1

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175.0 °C 1

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-40.0 °C 1

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UNSPECIFIED 1

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RECTANGULAR 1

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FLANGE MOUNT 1

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Active 1

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Polarity/Channel Type (1)

N-CHANNEL 1

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Surface Mount (1)

NO 1

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