Datasheets
MURS210T3G by: onsemi

Power Rectifier, Ultra-Fast Recovery, 2 A, 100 V, SMB, 2500-REEL

Part Details for MURS210T3G by onsemi

Results Overview of MURS210T3G by onsemi

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MURS210T3G Information

MURS210T3G by onsemi is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.

A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.

Price & Stock for MURS210T3G

Part # Distributor Description Stock Price Buy
DISTI # 82Y7029
Newark Rectifier, 2A, 100V, Do-214Aa, Repetitive Reverse Voltage Vrrm Max:100V, Forward Current If(Av):2A, Diode Configuration:Single, Forward Voltage Vf Max:940Mv, Reverse Recovery Time Trr Max:30Ns, Forward Surge Current Ifsm Max:50A, Rohs Compliant: Yes |Onsemi MURS210T3G RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 0
  • 1 $0.1540
$0.1540 Buy Now
DISTI # 70300491
RS ON Semi MURS210T3G, SMT Diode, 100V 2A, 30ns, 2-Pin DO-214AA | ON Semiconductor MURS210T3G RoHS: Not Compliant Min Qty: 25 Package Multiple: 1 Container: Bulk 0
  • 25 $0.2820
  • 250 $0.2680
  • 1,250 $0.2540
  • 2,500 $0.2400
$0.2400 / $0.2820 RFQ
DISTI # MURS210T3G
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 1 0
RFQ
DISTI # MURS210T3G
EBV Elektronik Diode Switching 100V 2A 2Pin SMB TR (Alt: MURS210T3G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 143 Weeks, 0 Days EBV - 0
Buy Now
Flip Electronics Stock, ship today 10000
RFQ
Win Source Electronics DIODE GEN PURP 100V 2A SMB 10858
  • 80 $0.6458
  • 170 $0.6042
  • 260 $0.5834
  • 370 $0.5417
  • 480 $0.5209
  • 600 $0.5000
$0.5000 / $0.6458 Buy Now

Part Details for MURS210T3G

MURS210T3G CAD Models

MURS210T3G Part Data Attributes

MURS210T3G onsemi
Buy Now Datasheet
Compare Parts:
MURS210T3G onsemi Power Rectifier, Ultra-Fast Recovery, 2 A, 100 V, SMB, 2500-REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code SMB
Pin Count 2
Manufacturer Package Code 403A-03
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.10.00.80
Factory Lead Time 2 Days
Samacsys Manufacturer onsemi
Additional Feature FREE WHEELING DIODE
Application GENERAL PURPOSE
Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 0.74 V
JESD-30 Code R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 100 A
Number of Elements 1
Number of Phases 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -60 °C
Output Current-Max 2 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 100 V
Reverse Recovery Time-Max 0.03 µs
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30

MURS210T3G Related Parts

MURS210T3G Frequently Asked Questions (FAQ)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. Multiple vias can be used to connect the thermal pad to an inner layer or the backside of the PCB for better heat dissipation.

  • Ensure that the device is operated within the recommended temperature range (up to 150°C). Use a heat sink or thermal interface material to improve heat dissipation. Monitor the device's junction temperature and adjust the operating conditions accordingly.

  • Handle the device by the body, not the leads. Avoid bending or twisting the leads. Store the device in a dry, cool place, away from direct sunlight and moisture. Use anti-static packaging and handling procedures to prevent ESD damage.

  • The gate resistor value depends on the specific application and the required switching frequency. A higher gate resistor value can reduce EMI, but may increase switching losses. A lower gate resistor value can reduce switching losses, but may increase EMI. Consult the application note or onsemi's support team for guidance.

  • Ensure that the devices are matched in terms of electrical characteristics and thermal performance. Use a common gate drive signal and ensure that the devices are thermally coupled to prevent thermal runaway. Consult the application note or onsemi's support team for guidance on paralleling multiple devices.

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