Datasheets
NDS8934 by:

Power Field-Effect Transistor, 3.8A I(D), 20V, 0.07ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

Part Details for NDS8934 by Fairchild Semiconductor Corporation

Overview of NDS8934 by Fairchild Semiconductor Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for NDS8934

Part # Distributor Description Stock Price Buy
Quest Components 20 V, 0.07 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET 611
  • 1 $1.9945
  • 51 $0.9973
  • 202 $0.7978
$0.7978 / $1.9945 Buy Now
Rochester Electronics Power Field-Effect Transistor, 3.8A, 20V, 0.07ohm, 2-Element, P-Channel, MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 4400
  • 1 $0.6256
  • 25 $0.6131
  • 100 $0.5881
  • 500 $0.5630
  • 1,000 $0.5318
$0.5318 / $0.6256 Buy Now

Part Details for NDS8934

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NDS8934 Part Data Attributes

NDS8934 Fairchild Semiconductor Corporation
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NDS8934 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 3.8A I(D), 20V, 0.07ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SOIC
Package Description SO-8
Pin Count 8
Manufacturer Package Code 8LD, SOIC,JEDEC MS-012, .150" NARROW BODY, DUAL DAP
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 3.8 A
Drain-source On Resistance-Max 0.07 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 15 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for NDS8934

This table gives cross-reference parts and alternative options found for NDS8934. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NDS8934, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NDS8934 20V, 0.07ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET Texas Instruments NDS8934 vs NDS8934
Part Number Description Manufacturer Compare
RF1K4909096 Power Field-Effect Transistor, 3.5A I(D), 12V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA Harris Semiconductor NDS8934 vs RF1K4909096
HAT1055R 5A, 60V, 0.13ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, FP-8DA, SOP-8 Renesas Electronics Corporation NDS8934 vs HAT1055R
NDS9956 3.5A, 20V, 0.1ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Texas Instruments NDS8934 vs NDS9956
RF1K49090 Power Field-Effect Transistor, 3.5A I(D), 12V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA Fairchild Semiconductor Corporation NDS8934 vs RF1K49090
FDS9926A_NL Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation NDS8934 vs FDS9926A_NL
FDS6961AZ Power Field-Effect Transistor, 3.5A I(D), 30V, 0.09ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation NDS8934 vs FDS6961AZ
PHN210T Power Field-Effect Transistor Nexperia NDS8934 vs PHN210T
IRF7101 Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, International Rectifier NDS8934 vs IRF7101
BSO211P Power Field-Effect Transistor, 4.7A I(D), 20V, 0.067ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Infineon Technologies AG NDS8934 vs BSO211P
FW133 Power Field-Effect Transistor, 7A I(D), 30V, 0.032ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 SANYO Electric Co Ltd NDS8934 vs FW133

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