Parametric results for: NDS8934 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 12

13 hits Apply

DS Breakdown Voltage-Min (1)

20 V 12

13 hits Apply

Drain Current-Max (ID) (1)

3.8 A 12

13 hits Apply

Drain-source On Resistance-Max (1)

70 mΩ 12

13 hits Apply

METAL-OXIDE SEMICONDUCTOR 12

13 hits Apply

R-PDSO-G8 12

13 hits Apply

e0 2 e3 2

13 hits Apply

Manufacturer (4)

Fairchild Semiconductor Corporation 6 National Semiconductor Corporation 1 onsemi 1 Texas Instruments 5

13 hits Apply

1 1

13 hits Apply

Number of Elements (1)

2 12

13 hits Apply

Number of Terminals (1)

8 12

13 hits Apply

ENHANCEMENT MODE 12

13 hits Apply

150.0 °C 11

13 hits Apply

PLASTIC/EPOXY 12

13 hits Apply

RECTANGULAR 12

13 hits Apply

SMALL OUTLINE 12

13 hits Apply

Obsolete 11 Transferred 2

13 hits Apply

Yes 1

13 hits Apply

260 1

13 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 12

13 hits Apply

2 W 6

13 hits Apply

2 W 3

13 hits Apply

Surface Mount (1)

YES 12

13 hits Apply