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NE325S01-T1B by:

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET

Part Details for NE325S01-T1B by NEC Electronics Group

Overview of NE325S01-T1B by NEC Electronics Group

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Applications Energy and Power Systems Renewable Energy Automotive

Part Details for NE325S01-T1B

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NE325S01-T1B Part Data Attributes

NE325S01-T1B NEC Electronics Group
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NE325S01-T1B NEC Electronics Group RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET
Part Life Cycle Code Transferred
Ihs Manufacturer NEC ELECTRONICS CORP
Package Description DISK BUTTON, O-CRDB-G4
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW NOISE
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 3 V
Drain Current-Max (ID) 0.02 A
FET Technology HETERO-JUNCTION
Highest Frequency Band KU BAND
JESD-30 Code O-CRDB-G4
Number of Elements 1
Number of Terminals 4
Operating Mode DEPLETION MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style DISK BUTTON
Polarity/Channel Type N-CHANNEL
Power Gain-Min (Gp) 11 dB
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position RADIAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for NE325S01-T1B

This table gives cross-reference parts and alternative options found for NE325S01-T1B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NE325S01-T1B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NE325S01-T1B RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET, PLASTIC, S01, 4 PIN NEC Electronics America Inc NE325S01-T1B vs NE325S01-T1B
Part Number Description Manufacturer Compare
NE32584C-SL RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Hetero-junction FET, NEC Compound Semiconductor Devices Ltd NE325S01-T1B vs NE32584C-SL
NE3210S01-T1 RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET, PLASTIC, SO1, 4 PIN California Eastern Laboratories (CEL) NE325S01-T1B vs NE3210S01-T1
NE32584C-T1 RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Hetero-junction FET, NEC Compound Semiconductor Devices Ltd NE325S01-T1B vs NE32584C-T1
NE3210S01 RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET NEC Electronics Group NE325S01-T1B vs NE3210S01
NE34018-T1-A NE34018-T1-A Renesas Electronics Corporation NE325S01-T1B vs NE34018-T1-A
NE34018-TI-64-A S BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HFET Renesas Electronics Corporation NE325S01-T1B vs NE34018-TI-64-A
NE329S01-T1 RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET NEC Electronics Group NE325S01-T1B vs NE329S01-T1
NE32484A-SL RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET NEC Electronics Group NE325S01-T1B vs NE32484A-SL
NE32984D-T1 RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Silicon, N-Channel, Hetero-junction FET NEC Electronics Group NE325S01-T1B vs NE32984D-T1
NE32484A-T1 RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Hetero-junction FET California Eastern Laboratories (CEL) NE325S01-T1B vs NE32484A-T1

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