Part Details for NE3510M04-T2B-A by Renesas Electronics Corporation
Overview of NE3510M04-T2B-A by Renesas Electronics Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for NE3510M04-T2B-A
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
NE3510M04-T2B-A
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Avnet Silica | (Alt: NE3510M04-T2B-A) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 28 Weeks, 0 Days | Silica - 0 |
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Part Details for NE3510M04-T2B-A
NE3510M04-T2B-A CAD Models
NE3510M04-T2B-A Part Data Attributes
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NE3510M04-T2B-A
Renesas Electronics Corporation
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Datasheet
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NE3510M04-T2B-A
Renesas Electronics Corporation
NE3510M04-T2B-A
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
Package Description | SMALL OUTLINE, R-PDSO-F4 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 3 V | |
Drain Current-Max (ID) | 0.03 A | |
FET Technology | JUNCTION | |
Highest Frequency Band | S BAND | |
JESD-30 Code | R-PDSO-F4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | DEPLETION MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.125 W | |
Power Gain-Min (Gp) | 14.5 dB | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | GALLIUM ARSENIDE |