Part Details for NE3512S02-T1D-A by California Eastern Laboratories (CEL)
Overview of NE3512S02-T1D-A by California Eastern Laboratories (CEL)
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
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Part Details for NE3512S02-T1D-A
NE3512S02-T1D-A CAD Models
NE3512S02-T1D-A Part Data Attributes
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NE3512S02-T1D-A
California Eastern Laboratories (CEL)
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Datasheet
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NE3512S02-T1D-A
California Eastern Laboratories (CEL)
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET, LEAD FREE, PLASTIC, S02, MICRO-X-4
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | CALIFORNIA EASTERN LABORATORIES | |
Package Description | LEAD FREE, PLASTIC, S02, MICRO-X-4 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 3 V | |
Drain Current-Max (ID) | 0.015 A | |
FET Technology | HETERO-JUNCTION | |
Highest Frequency Band | KU BAND | |
JESD-30 Code | R-PQMW-F4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | DEPLETION MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | MICROWAVE | |
Polarity/Channel Type | N-CHANNEL | |
Power Gain-Min (Gp) | 12.5 dB | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | QUAD | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |
Alternate Parts for NE3512S02-T1D-A
This table gives cross-reference parts and alternative options found for NE3512S02-T1D-A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NE3512S02-T1D-A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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NE3512S02-T1D-A | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET, LEAD FREE, PLASTIC, S02, MICRO-X-4 | NEC Electronics Group | NE3512S02-T1D-A vs NE3512S02-T1D-A |