Part Details for NE3512S02-T1D-A by NEC Compound Semiconductor Devices Ltd
Overview of NE3512S02-T1D-A by NEC Compound Semiconductor Devices Ltd
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Available Datasheets
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Part Details for NE3512S02-T1D-A
NE3512S02-T1D-A CAD Models
NE3512S02-T1D-A Part Data Attributes
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NE3512S02-T1D-A
NEC Compound Semiconductor Devices Ltd
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NE3512S02-T1D-A
NEC Compound Semiconductor Devices Ltd
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET, LEAD FREE, PLASTIC, S02, MICRO-X-4
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NEC COMPOUND SEMICONDUCTOR DEVICES LTD | |
| Package Description | LEAD FREE, PLASTIC, S02, MICRO-X-4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW NOISE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 3 V | |
| Drain Current-Max (ID) | 0.015 A | |
| FET Technology | HETERO-JUNCTION | |
| Highest Frequency Band | KU BAND | |
| JESD-30 Code | R-PXMW-F4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | DEPLETION MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROWAVE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Gain-Min (Gp) | 12.5 dB | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | UNSPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |