Datasheets
NE85600 by:

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, DIE-2

Part Details for NE85600 by NEC Electronics America Inc

Overview of NE85600 by NEC Electronics America Inc

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Applications Consumer Electronics Education and Research Industrial Automation Audio and Video Systems Electronic Manufacturing

Part Details for NE85600

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NE85600 Part Data Attributes

NE85600 NEC Electronics America Inc
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NE85600 NEC Electronics America Inc RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, DIE-2
Part Life Cycle Code Obsolete
Ihs Manufacturer NEC ELECTRONICS AMERICA INC
Package Description DIE-2
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW NOISE
Collector Current-Max (IC) 0.1 A
Collector-Base Capacitance-Max 1 pF
Collector-Emitter Voltage-Max 12 V
Configuration SINGLE
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-XUUC-N2
Number of Elements 1
Number of Terminals 2
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style UNCASED CHIP
Polarity/Channel Type NPN
Qualification Status Not Qualified
Surface Mount YES
Terminal Form NO LEAD
Terminal Position UPPER
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 7000 MHz

Alternate Parts for NE85600

This table gives cross-reference parts and alternative options found for NE85600. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NE85600, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NE85600 L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-2 Renesas Electronics Corporation NE85600 vs NE85600
Part Number Description Manufacturer Compare
AT-42000-GP4 RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, C Band, Silicon, NPN Hewlett Packard Co NE85600 vs AT-42000-GP4
AT-42000-GP4 RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, C Band, Silicon, NPN, DIE-2 Agilent Technologies Inc NE85600 vs AT-42000-GP4
AT-42000-GP4 RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, C Band, Silicon, NPN, DIE-2 Broadcom Limited NE85600 vs AT-42000-GP4
AT-42000-GP6 RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, C Band, Silicon, NPN Hewlett Packard Co NE85600 vs AT-42000-GP6
MA4T24300 RF Small Signal Bipolar Transistor, 0.11A I(C), 1-Element, C Band, Silicon, NPN, MACOM NE85600 vs MA4T24300
FHT3356R24 RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, SOT-23, 3 PIN Fenghua (HK) Electronics Ltd NE85600 vs FHT3356R24
AT-42000-GP4G RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, C Band, Silicon, NPN, DIE-2 Agilent Technologies Inc NE85600 vs AT-42000-GP4G
AT-42000-GP4 C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-2 Avago Technologies NE85600 vs AT-42000-GP4
NE85600-A RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, LEAD FREE, DIE-2 NEC Electronics Group NE85600 vs NE85600-A

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