Datasheets
NJVMJD112G by: onsemi

2.0 A, 100 V NPN Darlington Bipolar Power Transistor, 75-TUBE, Automotive Qualified

Part Details for NJVMJD112G by onsemi

Overview of NJVMJD112G by onsemi

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for NJVMJD112G

Part # Distributor Description Stock Price Buy
DISTI # 28X8016
Newark 2.0 A, 100 V Npn Darlington Bipolar Power Transistor/ Tube Rohs Compliant: Yes |Onsemi NJVMJD112G Min Qty: 825 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 500 $0.3560
  • 1,000 $0.3110
  • 2,500 $0.2510
  • 10,000 $0.2440
$0.2440 / $0.3560 Buy Now
DISTI # NJVMJD112G-ND
DigiKey TRANS NPN DARL 100V 2A DPAK Min Qty: 1 Lead time: 8 Weeks Container: Tube 546
In Stock
  • 1 $0.7100
  • 75 $0.5855
  • 150 $0.4249
  • 525 $0.3551
  • 1,050 $0.3022
  • 2,025 $0.2691
  • 5,025 $0.2550
  • 10,050 $0.2361
$0.2361 / $0.7100 Buy Now
DISTI # NJVMJD112G
Avnet Americas Trans Darlington NPN 100V 4A 3-Pin DPAK Rail - Rail/Tube (Alt: NJVMJD112G) RoHS: Compliant Min Qty: 2700 Package Multiple: 75 Lead time: 8 Weeks, 0 Days Container: Tube 6225 Factory Stock
  • 2,700 $0.2768
  • 2,850 $0.2693
  • 5,550 $0.2618
  • 13,500 $0.2543
  • 27,000 $0.2468
  • 135,000 $0.2394
  • 270,000 $0.2319
$0.2319 / $0.2768 Buy Now
DISTI # 863-NJVMJD112G
Mouser Electronics Darlington Transistors 2.0 A, 100 V NPN Darlington Bipolar Power Transistor RoHS: Compliant 930
  • 1 $0.7100
  • 10 $0.6620
  • 75 $0.4240
  • 525 $0.3550
  • 1,050 $0.2690
  • 2,550 $0.2630
  • 4,950 $0.2360
$0.2360 / $0.7100 Buy Now
DISTI # NJVMJD112G
Avnet Americas Trans Darlington NPN 100V 4A 3-Pin DPAK Rail - Rail/Tube (Alt: NJVMJD112G) RoHS: Compliant Min Qty: 2700 Package Multiple: 75 Lead time: 8 Weeks, 0 Days Container: Tube 6225 Factory Stock
  • 2,700 $0.2768
  • 2,850 $0.2693
  • 5,550 $0.2618
  • 13,500 $0.2543
  • 27,000 $0.2468
  • 135,000 $0.2394
  • 270,000 $0.2319
$0.2319 / $0.2768 Buy Now
DISTI # 3615478
Farnell BIPOLAR TRANSISTOR RoHS: Compliant Min Qty: 825 Lead time: 11 Weeks, 1 Days Container: Tube 0
  • 825 $0.3036
$0.3036 Buy Now
Flip Electronics Stock, ship today 1700
  • 1 $0.2100
$0.2100 RFQ

Part Details for NJVMJD112G

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NJVMJD112G Part Data Attributes:

NJVMJD112G onsemi
Buy Now Datasheet
Compare Parts:
NJVMJD112G onsemi 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, 75-TUBE, Automotive Qualified
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Package Description DPAK-3/2
Manufacturer Package Code 369C
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 59 Weeks
Samacsys Manufacturer onsemi
Collector Current-Max (IC) 2 A
Configuration DARLINGTON
DC Current Gain-Min (hFE) 1000
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 20 W
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 25 MHz

Alternate Parts for NJVMJD112G

This table gives cross-reference parts and alternative options found for NJVMJD112G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NJVMJD112G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MJD112-T1 Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 Samsung Semiconductor NJVMJD112G vs MJD112-T1
NJVMJD112T4G 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL, Automotive Qualified onsemi NJVMJD112G vs NJVMJD112T4G
CJD112TR13 Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, Central Semiconductor Corp NJVMJD112G vs CJD112TR13
Part Number Description Manufacturer Compare
MJD6036 4A, 80V, NPN, Si, POWER TRANSISTOR, CASE 369A-13, DPAK-3 onsemi NJVMJD112G vs MJD6036
FZT604 Power Bipolar Transistor, 1.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN Diodes Incorporated NJVMJD112G vs FZT604
SGS112 2A, 100V, NPN, Si, POWER TRANSISTOR STMicroelectronics NJVMJD112G vs SGS112
FZT604 Power Bipolar Transistor, 1.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, Wurth Elektronik NJVMJD112G vs FZT604
KSH112 Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3 Fairchild Semiconductor Corporation NJVMJD112G vs KSH112
FZT604TA Power Bipolar Transistor, 1.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN Diodes Incorporated NJVMJD112G vs FZT604TA
NJVMJD112T4G 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL, Automotive Qualified onsemi NJVMJD112G vs NJVMJD112T4G
SGS110 2A, 60V, NPN, Si, POWER TRANSISTOR STMicroelectronics NJVMJD112G vs SGS110
UFZT605 Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN Diodes Incorporated NJVMJD112G vs UFZT605
FZT605 Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, Wurth Elektronik NJVMJD112G vs FZT605

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