Datasheets
NJVMJD112T4G by: onsemi

2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL, Automotive Qualified

Part Details for NJVMJD112T4G by onsemi

Overview of NJVMJD112T4G by onsemi

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for NJVMJD112T4G

Part # Distributor Description Stock Price Buy
DISTI # 488-NJVMJD112T4GCT-ND
DigiKey TRANS NPN DARL 100V 2A DPAK Min Qty: 1 Lead time: 9 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 1706
In Stock
  • 1 $0.7900
  • 10 $0.6860
  • 100 $0.4750
  • 500 $0.3968
  • 1,000 $0.3377
  • 2,500 $0.3008
  • 5,000 $0.2850
  • 12,500 $0.2639
  • 25,000 $0.2612
$0.2612 / $0.7900 Buy Now
DISTI # NJVMJD112T4G
Avnet Americas Trans Darlington NPN 100V 4A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: NJVMJD112T4G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 9 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.3093
  • 5,000 $0.3010
  • 10,000 $0.2926
  • 15,000 $0.2842
  • 20,000 $0.2759
  • 25,000 $0.2675
  • 250,000 $0.2592
$0.2592 / $0.3093 Buy Now
DISTI # 863-NJVMJD112T4G
Mouser Electronics Darlington Transistors BIP DPAK NPN 2A 100V TR 0
  • 1 $0.7800
  • 10 $0.6740
  • 100 $0.4670
  • 500 $0.3920
  • 1,000 $0.3380
  • 2,500 $0.3000
  • 5,000 $0.2840
  • 10,000 $0.2630
  • 25,000 $0.2610
$0.2610 / $0.7800 Order Now
DISTI # NJVMJD112T4G
Avnet Americas Trans Darlington NPN 100V 4A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: NJVMJD112T4G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 9 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.3093
  • 5,000 $0.3010
  • 10,000 $0.2926
  • 15,000 $0.2842
  • 20,000 $0.2759
  • 25,000 $0.2675
  • 250,000 $0.2592
$0.2592 / $0.3093 Buy Now
DISTI # NJVMJD112T4G
Avnet Americas Trans Darlington NPN 100V 4A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: NJVMJD112T4G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 9 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.3093
  • 5,000 $0.3010
  • 10,000 $0.2926
  • 15,000 $0.2842
  • 20,000 $0.2759
  • 25,000 $0.2675
  • 250,000 $0.2592
$0.2592 / $0.3093 Buy Now
DISTI # NJVMJD112T4G
Avnet Asia Trans Darlington NPN 100V 4A 3-Pin(2+Tab) DPAK T/R (Alt: NJVMJD112T4G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 9 Weeks, 0 Days 0
  • 2,500 $0.3292
  • 5,000 $0.2808
$0.2808 / $0.3292 Buy Now
DISTI # NJVMJD112T4G
Avnet Silica Trans Darlington NPN 100V 4A 3-Pin(2+Tab) DPAK T/R (Alt: NJVMJD112T4G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 1 Weeks, 3 Days Silica - 0
Buy Now
DISTI # NJVMJD112T4G
EBV Elektronik Trans Darlington NPN 100V 4A 3-Pin(2+Tab) DPAK T/R (Alt: NJVMJD112T4G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 1 Weeks, 4 Days EBV - 2500
Buy Now
Flip Electronics Stock, ship today 1750
  • 1 $0.2200
$0.2200 RFQ
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 2500 2500
  • 2,500 $0.7493
$0.7493 Buy Now

Part Details for NJVMJD112T4G

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NJVMJD112T4G Part Data Attributes

NJVMJD112T4G onsemi
Buy Now Datasheet
Compare Parts:
NJVMJD112T4G onsemi 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL, Automotive Qualified
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code DPAK (SINGLE GAUGE) TO-252
Package Description DPAK-3/2
Pin Count 3
Manufacturer Package Code 369C
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 73 Weeks
Samacsys Manufacturer onsemi
Collector Current-Max (IC) 2 A
Collector-Emitter Voltage-Max 100 V
Configuration DARLINGTON
DC Current Gain-Min (hFE) 1000
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 20 W
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 25 MHz

Alternate Parts for NJVMJD112T4G

This table gives cross-reference parts and alternative options found for NJVMJD112T4G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NJVMJD112T4G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MJD112G 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE onsemi NJVMJD112T4G vs MJD112G
MJD112T4G 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL onsemi NJVMJD112T4G vs MJD112T4G
MJD112-T1 Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 Samsung Semiconductor NJVMJD112T4G vs MJD112-T1
MJD112 2A, 100V, PNP, Si, POWER TRANSISTOR, TO-252, DPAK-3 STMicroelectronics NJVMJD112T4G vs MJD112
MJD112RLG 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 1800-REEL onsemi NJVMJD112T4G vs MJD112RLG
Part Number Description Manufacturer Compare
MJD112-T1 Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 Samsung Semiconductor NJVMJD112T4G vs MJD112-T1
SGS111 2A, 80V, NPN, Si, POWER TRANSISTOR STMicroelectronics NJVMJD112T4G vs SGS111
KSH112 Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3 Fairchild Semiconductor Corporation NJVMJD112T4G vs KSH112
FZT604 Power Bipolar Transistor, 1.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN Diodes Incorporated NJVMJD112T4G vs FZT604
MJD112T4G 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL onsemi NJVMJD112T4G vs MJD112T4G
FZT604 Power Bipolar Transistor, 1.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, Wurth Elektronik NJVMJD112T4G vs FZT604
FZT604TA Power Bipolar Transistor, 1.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN Diodes Incorporated NJVMJD112T4G vs FZT604TA
FZT604TC Power Bipolar Transistor, 1.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN Diodes Incorporated NJVMJD112T4G vs FZT604TC
MJD6036 4A, 80V, NPN, Si, POWER TRANSISTOR, CASE 369A-13, DPAK-3 onsemi NJVMJD112T4G vs MJD6036
MJD112G 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE onsemi NJVMJD112T4G vs MJD112G

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