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Part Details for NJVMJD127T4G by onsemi
Overview of NJVMJD127T4G by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for NJVMJD127T4G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
NJVMJD127T4GOSCT-ND
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DigiKey | TRANS PNP DARL 100V 8A DPAK Min Qty: 1 Lead time: 14 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
4858 In Stock |
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$0.3046 / $0.9200 | Buy Now |
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DISTI #
863-NJVMJD127T4G
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Mouser Electronics | Darlington Transistors BIP DPAK PNP 8A 100V RoHS: Compliant | 12701 |
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$0.3040 / $0.5500 | Buy Now |
Part Details for NJVMJD127T4G
NJVMJD127T4G CAD Models
NJVMJD127T4G Part Data Attributes
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NJVMJD127T4G
onsemi
Buy Now
Datasheet
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Compare Parts:
NJVMJD127T4G
onsemi
8.0 A, 100 V PNP Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL, Automotive Qualified
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | DPAK (SINGLE GAUGE) TO-252 | |
| Package Description | DPAK-3/2 | |
| Pin Count | 3 | |
| Manufacturer Package Code | 369C | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 63 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 8 A | |
| Collector-Emitter Voltage-Max | 100 V | |
| Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
| DC Current Gain-Min (hFE) | 100 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -65 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | PNP | |
| Power Dissipation-Max (Abs) | 20 W | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 4 MHz |
Alternate Parts for NJVMJD127T4G
This table gives cross-reference parts and alternative options found for NJVMJD127T4G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NJVMJD127T4G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MJD127 | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3 | Fairchild Semiconductor Corporation | NJVMJD127T4G vs MJD127 |
| MJD127-T1 | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 | Samsung Semiconductor | NJVMJD127T4G vs MJD127-T1 |
| KSH127TM | PNP Silicon Darlington Transistor, 2500-REEL | onsemi | NJVMJD127T4G vs KSH127TM |
| MJD127TF | 8.0 A, 100 V PNP Darlington Bipolar Power Transistor, 2000-REEL | onsemi | NJVMJD127T4G vs MJD127TF |
| MJD127 | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, PLASTIC, DPACK-3 | Micro Commercial Components | NJVMJD127T4G vs MJD127 |
| MJD127 | Power Bipolar Transistor | Jiangsu Changjiang Electronics Technology Co Ltd | NJVMJD127T4G vs MJD127 |
| KSH127 | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3 | Fairchild Semiconductor Corporation | NJVMJD127T4G vs KSH127 |
| CJD127TR13 | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, | Central Semiconductor Corp | NJVMJD127T4G vs CJD127TR13 |
| MJD127T4G | 8.0 A, 100 V PNP Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL | onsemi | NJVMJD127T4G vs MJD127T4G |
| KSH127 | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 | Samsung Semiconductor | NJVMJD127T4G vs KSH127 |