Part Details for NP80N06PLG-E1B-AY by Renesas Electronics Corporation
Overview of NP80N06PLG-E1B-AY by Renesas Electronics Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
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NP80N06PLG-E1B-AY | Renesas Electronics Corporation | Power MOSFETs for Automotive |
Part Details for NP80N06PLG-E1B-AY
NP80N06PLG-E1B-AY CAD Models
NP80N06PLG-E1B-AY Part Data Attributes
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NP80N06PLG-E1B-AY
Renesas Electronics Corporation
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Datasheet
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NP80N06PLG-E1B-AY
Renesas Electronics Corporation
Power MOSFETs for Automotive, MP-25ZP, /Embossed Tape
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
Part Package Code | MP-25ZP | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 3 | |
Manufacturer Package Code | PRSS0004AL | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Renesas Electronics | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 80 A | |
Drain-source On Resistance-Max | 0.0083 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 115 W | |
Pulsed Drain Current-Max (IDM) | 180 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for NP80N06PLG-E1B-AY
This table gives cross-reference parts and alternative options found for NP80N06PLG-E1B-AY. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NP80N06PLG-E1B-AY, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
BUK95608-55A | TRANSISTOR 75 A, 55 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power | NXP Semiconductors | NP80N06PLG-E1B-AY vs BUK95608-55A |
FS70VSJ-06-T2 | Power Field-Effect Transistor, 70A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN | Mitsubishi Electric | NP80N06PLG-E1B-AY vs FS70VSJ-06-T2 |
STI60N55F3 | 80A, 55V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, I2PAK-3 | STMicroelectronics | NP80N06PLG-E1B-AY vs STI60N55F3 |
IPB77N06S3-09 | Power Field-Effect Transistor, 77A I(D), 55V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | NP80N06PLG-E1B-AY vs IPB77N06S3-09 |
IRF1010EZ | Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 | Infineon Technologies AG | NP80N06PLG-E1B-AY vs IRF1010EZ |
IPB080N06NG | Power Field-Effect Transistor, 80A I(D), 60V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | NP80N06PLG-E1B-AY vs IPB080N06NG |
STU60N55F3 | 80A, 55V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3 | STMicroelectronics | NP80N06PLG-E1B-AY vs STU60N55F3 |
IRL3705Z | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 | Infineon Technologies AG | NP80N06PLG-E1B-AY vs IRL3705Z |
STB80NF55-08-1 | 80A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, I2PAK-3 | STMicroelectronics | NP80N06PLG-E1B-AY vs STB80NF55-08-1 |
IPB80N06S3L05ATMA1 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | NP80N06PLG-E1B-AY vs IPB80N06S3L05ATMA1 |