Part Details for NTD4979NT4G by onsemi
Overview of NTD4979NT4G by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for NTD4979NT4G
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
74AK0883
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Newark | Ntd4979Nt4G, Single Mosfets |Onsemi NTD4979NT4G Min Qty: 1790 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.3050 / $0.3360 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, N-Channel, MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 462897 |
|
$0.1741 / $0.2048 | Buy Now |
DISTI #
4184811
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Farnell | MOSFET, N-CH, 30V, 41A, TO-252 RoHS: Compliant Min Qty: 2500 Lead time: 3 Weeks, 1 Days Container: Each | 460397 |
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$0.2843 | Buy Now |
Part Details for NTD4979NT4G
NTD4979NT4G CAD Models
NTD4979NT4G Part Data Attributes
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NTD4979NT4G
onsemi
Buy Now
Datasheet
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NTD4979NT4G
onsemi
POWER, FET
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Package Description | DPAK-3/2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Avalanche Energy Rating (Eas) | 18 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 9.4 A | |
Drain-source On Resistance-Max | 0.019 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 26.3 W | |
Pulsed Drain Current-Max (IDM) | 150 A | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for NTD4979NT4G
This table gives cross-reference parts and alternative options found for NTD4979NT4G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTD4979NT4G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
BSZ0909NSATMA1 | Power Field-Effect Transistor, 11A I(D), 30V, 0.0176ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 | Infineon Technologies AG | NTD4979NT4G vs BSZ0909NSATMA1 |
RP1E100XNTR | Power Field-Effect Transistor, 10A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MPT6, 6 PIN | ROHM Semiconductor | NTD4979NT4G vs RP1E100XNTR |
NTTFS4929NTWG | Single N-Channel Power MOSFET 30V, 34A, 11mΩ, WDFN8 3.3x3.3, 0.65P, 5000-REEL | onsemi | NTD4979NT4G vs NTTFS4929NTWG |
BSZ0909NS | Power Field-Effect Transistor, 11A I(D), 30V, 0.0176ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 | Infineon Technologies AG | NTD4979NT4G vs BSZ0909NS |