Part Details for NTE221 by NTE Electronics Inc
Overview of NTE221 by NTE Electronics Inc
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
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Price & Stock for NTE221
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
29C7466
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Newark | Dual Gate Rf Mosfet, N Channel 20V, To72, Drain Source Voltage Vds:20V, Continuous Drain Current Id:18Ma, Power Dissipation:400Mw, Operating Frequency Min:-, Operating Frequency Max:-, No. Of Pins:3Pins, Channel Type:N Channel, Msl:-Rohs Compliant: Yes |Nte Electronics NTE221 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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DISTI #
2368-NTE221-ND
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DigiKey | RF MOSFET 13V TO72 Min Qty: 1 Lead time: 1 Weeks Container: Bag MARKETPLACE PRODUCT |
51 In Stock |
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$10.1200 / $12.1900 | Buy Now |
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Onlinecomponents.com | Mosfet N-channel Dual Gate 20V Idss=18ma TO-72 Case Vhf AMP/mixer Applications RoHS: Compliant |
1 In Stock |
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$9.2300 / $14.7300 | Buy Now |
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Bristol Electronics | Min Qty: 1 | 4 |
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$9.0000 | Buy Now |
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Quest Components | VHF BAND, SI, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-72 | 11 |
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$10.3613 / $13.8150 | Buy Now |
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Quest Components | VHF BAND, SI, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-72 | 3 |
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$12.0000 | Buy Now |
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DISTI #
NTE221
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TME | Transistor: N-MOSFET, unipolar, RF, 20V, 18mA, 400mW, TO72, THT Min Qty: 1 | 6 |
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$10.2000 / $14.3000 | Buy Now |
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Master Electronics | Mosfet N-channel Dual Gate 20V Idss=18ma TO-72 Case Vhf AMP/mixer Applications RoHS: Compliant |
1 In Stock |
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$9.2300 / $14.7300 | Buy Now |
Part Details for NTE221
NTE221 CAD Models
NTE221 Part Data Attributes
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NTE221
NTE Electronics Inc
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Datasheet
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NTE221
NTE Electronics Inc
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-72,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NTE ELECTRONICS INC | |
| Package Description | CYLINDRICAL, O-MBCY-W4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 20 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 0.03 pF | |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
| JEDEC-95 Code | TO-72 | |
| JESD-30 Code | O-MBCY-W4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | DUAL GATE, DEPLETION MODE | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.4 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |