Datasheets
NTE2381 by: NTE Electronics Inc

Power Field-Effect Transistor, 2A I(D), 500V, 6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Part Details for NTE2381 by NTE Electronics Inc

Overview of NTE2381 by NTE Electronics Inc

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Price & Stock for NTE2381

Part # Distributor Description Stock Price Buy
DISTI # 31C3594
Newark P Channel Mosfet, -500V, 2A, To-220, Channel Type:P Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:2A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:6V, Gate Source Threshold Voltage Max:4.5V, Msl:- Rohs Compliant: Yes |Nte Electronics NTE2381 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # 2368-NTE2381-ND
DigiKey MOSFET P-CHANNEL 500V 2.7A TO220 Lead time: 1 Weeks Container: Bag MARKETPLACE PRODUCT Temporarily Out of Stock
Buy Now
DISTI # NTE2381
TME Transistor: P-MOSFET, unipolar, -500V, -2.7A, Idm: -10.8A, 85W Min Qty: 1 0
  • 1 $13.3000
  • 3 $11.9000
  • 10 $10.6000
  • 25 $9.4800
$9.4800 / $13.3000 RFQ

Part Details for NTE2381

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NTE2381 Part Data Attributes

NTE2381 NTE Electronics Inc
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NTE2381 NTE Electronics Inc Power Field-Effect Transistor, 2A I(D), 500V, 6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer NTE ELECTRONICS INC
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 2 A
Drain-source On Resistance-Max 6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 75 W
Power Dissipation-Max (Abs) 75 W
Pulsed Drain Current-Max (IDM) 8 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 200 ns
Turn-on Time-Max (ton) 150 ns

Alternate Parts for NTE2381

This table gives cross-reference parts and alternative options found for NTE2381. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTE2381, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MTP2P50EG Power MOSFET -500V -2A 6 Ohm Single P-Channel TO-220, TO-220 3 LEAD STANDARD, 50-TUBE onsemi NTE2381 vs MTP2P50EG
VP0650N5 Power Field-Effect Transistor, 0.25A I(D), 500V, 30ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Supertex Inc NTE2381 vs VP0650N5
VP0345N5 Power Field-Effect Transistor, 1A I(D), 450V, 7.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Supertex Inc NTE2381 vs VP0345N5
MTP2P50E 2A, 500V, 6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN Rochester Electronics LLC NTE2381 vs MTP2P50E
VP2450N8 Power Field-Effect Transistor, 0.16A I(D), 500V, 30ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA, TO-243AA, 3 PIN Supertex Inc NTE2381 vs VP2450N8
MTP2P50E Power MOSFET -500V -2A 6 Ohm Single P-Channel TO-220, TO-220 3 LEAD STANDARD, 50-TUBE onsemi NTE2381 vs MTP2P50E

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