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Transistors / Small Signal Field-Effect Transistors / NTHD4102PT1G
Datasheets
NTHD4102PT1G by: onsemi

Dual P-Channel ChipFET™ Power MOSFET -20V -4.1A 80mΩ, ChipFET, 3000-REEL

Part Details for NTHD4102PT1G by onsemi

Results Overview of NTHD4102PT1G by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Audio and Video Systems

NTHD4102PT1G Information

NTHD4102PT1G by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for NTHD4102PT1G

Part # Distributor Description Stock Price Buy
DISTI # 81Y7043
Newark Mosfet, Dual P Ch, -20V, -2.9A, Chipfet, Transistor Polarity:Dual P Channel, Continuous Drain Current Id:-2.9A, Drain Source Voltage Vds:-20V, On Resistance Rds(On):0.064Ohm, Rds(On) Test Voltage Vgs:-4.5V, Threshold Voltage Rohs Compliant: Yes |Onsemi NTHD4102PT1G RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 6890
  • 1 $1.4700
  • 10 $0.9730
  • 25 $0.8690
  • 50 $0.7640
  • 100 $0.6600
  • 250 $0.5920
$0.5920 / $1.4700 Buy Now
DISTI # 83H7827
Newark P Channel Mosfet, -20V, 1206A, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds N Channel:20V, Drain Source Voltage Vds P Channel:20V, Continuous Drain Current Id N Channel:2.9A, Continuous Drain Current Id P Channel:2.9A Rohs Compliant: Yes |Onsemi NTHD4102PT1G RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 3,000 $0.5010
  • 6,000 $0.4620
  • 12,000 $0.4320
  • 18,000 $0.4020
  • 30,000 $0.3850
$0.3850 / $0.5010 Buy Now
DISTI # NTHD4102PT1G
Avnet Americas Transistor MOSFET Array Dual P-CH 20V 4.1A 8-Pin ChipFET T/R - Tape and Reel (Alt: NTHD4102PT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel 45000
RFQ
DISTI # NTHD4102PT1G
Avnet Americas Transistor MOSFET Array Dual P-CH 20V 4.1A 8-Pin ChipFET T/R - Tape and Reel (Alt: NTHD4102PT1G) RoHS: Compliant Min Qty: 1112 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel 66000 Partner Stock
  • 1,112 $0.5488
  • 1,200 $0.5850
  • 2,300 $0.5357
  • 5,600 $0.5332
  • 12,000 $0.5294
$0.5294 / $0.5850 Buy Now
DISTI # NTHD4102PT1G
Avnet Americas Transistor MOSFET Array Dual P-CH 20V 4.1A 8-Pin ChipFET T/R - Tape and Reel (Alt: NTHD4102PT1G) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel 66000 Factory Stock
  • 6,000 $0.3632
  • 12,000 $0.3871
  • 18,000 $0.3545
  • 30,000 $0.3528
  • 60,000 $0.3503
$0.3503 / $0.3871 Buy Now
DISTI # 70341331
RS NTHD4102PT1G Dual P-channel MOSFET Transistor, 4.1 A, 20 V, 8-Pin ChipFET | ON Semiconductor NTHD4102PT1G RoHS: Not Compliant Min Qty: 25 Package Multiple: 1 Container: Bulk 0
  • 25 $0.8400
  • 250 $0.8000
  • 1,250 $0.7600
  • 2,500 $0.7200
$0.7200 / $0.8400 RFQ
Bristol Electronics   Min Qty: 5 990
  • 5 $1.1250
  • 19 $0.7313
  • 70 $0.4219
  • 239 $0.3600
  • 515 $0.3150
$0.3150 / $1.1250 Buy Now
DISTI # NTHD4102PT1G
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 6000 0
  • 6,000 $0.3700
$0.3700 Buy Now
DISTI # NTHD4102PT1G
Avnet Asia Transistor MOSFET Array Dual P-CH 20V 4.1A 8-Pin ChipFET T/R (Alt: NTHD4102PT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days 0
  • 3,000 $0.4254
  • 6,000 $0.3971
  • 9,000 $0.3867
  • 15,000 $0.3770
  • 30,000 $0.3676
  • 75,000 $0.3588
  • 150,000 $0.3503
$0.3503 / $0.4254 Buy Now
DISTI # NTHD4102PT1G
Avnet Silica Transistor MOSFET Array Dual PCH 20V 41A 8Pin ChipFET TR (Alt: NTHD4102PT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Silica - 36000
Buy Now
DISTI # NTHD4102PT1G
EBV Elektronik Transistor MOSFET Array Dual PCH 20V 41A 8Pin ChipFET TR (Alt: NTHD4102PT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days EBV - 0
Buy Now
Flip Electronics Stock, ship today 66000
RFQ
LCSC 20V 4.1A 1.1W 64m4.5V2.9A 450mV 2 P-Channel SMD-8P MOSFETs ROHS 648
  • 1 $0.8153
  • 10 $0.6470
  • 30 $0.5749
  • 100 $0.4849
  • 500 $0.4449
  • 1,000 $0.4208
$0.4208 / $0.8153 Buy Now
New Advantage Corporation CHIPFET 8/POWER MOSFET -20 V, -4.1 A DUAL P-CHANNE RoHS: Compliant Min Qty: 1 Package Multiple: 3000 6000
  • 3,000 $0.6257
  • 6,000 $0.5790
$0.5790 / $0.6257 Buy Now
Vyrian Transistors 17820
RFQ
Win Source Electronics Trans MOSFET P-CH 20V 2.9A 8-Pin Chip FET T/R / MOSFET 2P-CH 20V 2.9A CHIPFET 23999
  • 55 $0.9587
  • 130 $0.7867
  • 200 $0.7621
  • 275 $0.7375
  • 355 $0.7129
  • 470 $0.6392
$0.6392 / $0.9587 Buy Now

Part Details for NTHD4102PT1G

NTHD4102PT1G CAD Models

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NTHD4102PT1G Part Data Attributes

Parametric Data
NTHD4102PT1G onsemi
Buy Now Datasheet
Compare Parts:
NTHD4102PT1G onsemi Dual P-Channel ChipFET™ Power MOSFET -20V -4.1A 80mΩ, ChipFET, 3000-REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code ChipFET
Package Description CHIPFET-8
Pin Count 8
Manufacturer Package Code 1206A-03
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 2 Days
Samacsys Manufacturer onsemi
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 2.9 A
Drain-source On Resistance-Max 0.08 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XDSO-C8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2.1 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for NTHD4102PT1G

This table gives cross-reference parts and alternative options found for NTHD4102PT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTHD4102PT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
NTHD4102PT1 onsemi Check for Price Dual P-Channel ChipFET™ Power MOSFET -20V -4.1A 80mΩ, ChipFET, 3000-REEL NTHD4102PT1G vs NTHD4102PT1
SI5935DC-T1-E3 Vishay Siliconix Check for Price Small Signal Field-Effect Transistor, 3A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, LEADLESS, 1206-8, CHIPFET-8 NTHD4102PT1G vs SI5935DC-T1-E3

NTHD4102PT1G Related Parts

NTHD4102PT1G Frequently Asked Questions (FAQ)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. Multiple vias can be used to connect the thermal pad to an inner layer or the backside of the PCB for better heat dissipation.

  • The device requires a stable input voltage and a proper biasing circuit to ensure optimal performance. A voltage regulator can be used to regulate the input voltage, and a biasing circuit with resistors and capacitors can be used to set the desired operating point.

  • The device is sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Handling the device with an ESD wrist strap or mat, and storing it in an anti-static bag can prevent damage.

  • Troubleshooting can be done by checking the input voltage, current, and temperature of the device. A thermal camera or thermometer can be used to measure the temperature, and a multimeter can be used to measure the voltage and current.

  • A PCB material with a high thermal conductivity, such as FR4 or Rogers, is recommended. A thicker PCB (e.g., 1.6 mm) can help to dissipate heat more efficiently.

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