Datasheets
NTHD5903T1G by:

Power MOSFET -20 V, -3.0 A, Dual P-Channel ChipFET™, ChipFET, 3000-REEL

Part Details for NTHD5903T1G by onsemi

Overview of NTHD5903T1G by onsemi

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for NTHD5903T1G

Part # Distributor Description Stock Price Buy
DISTI # 74AK0956
Newark Nthd5903T1G, Single Mosfets |Onsemi NTHD5903T1G Min Qty: 1240 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1,000 $0.3380
  • 2,500 $0.2750
  • 10,000 $0.2660
$0.2660 / $0.3380 Buy Now
Rochester Electronics NTHD5903 - Small Signal Field-Effect Transistor, 2.2A, 20V, 2-Element, P-Channel, MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 2475
  • 1 $0.2958
  • 25 $0.2899
  • 100 $0.2781
  • 500 $0.2662
  • 1,000 $0.2514
$0.2514 / $0.2958 Buy Now
DISTI # 4184896
Farnell NTHD5903T1G, SINGLE MOSFETS RoHS: Compliant Min Qty: 3000 Lead time: 3 Weeks, 1 Days Container: Each 2475
  • 3,000 $0.4458
$0.4458 Buy Now

Part Details for NTHD5903T1G

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NTHD5903T1G Part Data Attributes

NTHD5903T1G onsemi
Buy Now Datasheet
Compare Parts:
NTHD5903T1G onsemi Power MOSFET -20 V, -3.0 A, Dual P-Channel ChipFET™, ChipFET, 3000-REEL
Pbfree Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code ChipFET
Package Description CHIPFET-8
Pin Count 8
Manufacturer Package Code 1206A-03
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 2.2 A
Drain-source On Resistance-Max 0.155 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XDSO-C8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2.1 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for NTHD5903T1G

This table gives cross-reference parts and alternative options found for NTHD5903T1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTHD5903T1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NTHD5903T1G 2200mA, 20V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 1206A-03, CHIPFET-8 Rochester Electronics LLC NTHD5903T1G vs NTHD5903T1G
NTHD5903T1 2200mA, 20V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 1206A-03, CHIPFET-8 Rochester Electronics LLC NTHD5903T1G vs NTHD5903T1
Part Number Description Manufacturer Compare
NTHD5903T1 2200mA, 20V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 1206A-03, CHIPFET-8 Rochester Electronics LLC NTHD5903T1G vs NTHD5903T1
NTHD5903T1G 2200mA, 20V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 1206A-03, CHIPFET-8 Rochester Electronics LLC NTHD5903T1G vs NTHD5903T1G

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