Datasheets
NTHD5904T1 by:

3100mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, CHIPFET-8

Part Details for NTHD5904T1 by onsemi

Overview of NTHD5904T1 by onsemi

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Applications Consumer Electronics Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for NTHD5904T1

Part # Distributor Description Stock Price Buy
DISTI # 74AK0958
Newark Nthd5904T1, Single Mosfets |Onsemi NTHD5904T1 Min Qty: 1690 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1,000 $0.2470
  • 2,500 $0.2010
  • 10,000 $0.1940
$0.1940 / $0.2470 Buy Now
Rochester Electronics Small Signal Field-Effect Transistor, 3.1A, 20V, 2-Element, N-Channel, MOSFET RoHS: Not Compliant Status: Obsolete Min Qty: 1 81000
  • 1 $0.2161
  • 25 $0.2118
  • 100 $0.2031
  • 500 $0.1945
  • 1,000 $0.1837
$0.1837 / $0.2161 Buy Now
DISTI # 4184898
Farnell NTHD5904T1, SINGLE MOSFETS RoHS: Compliant Min Qty: 1687 Lead time: 3 Weeks, 1 Days Container: Each 81000
  • 1,687 $0.3259
$0.3259 Buy Now

Part Details for NTHD5904T1

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NTHD5904T1 Part Data Attributes

NTHD5904T1 onsemi
Buy Now Datasheet
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NTHD5904T1 onsemi 3100mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, CHIPFET-8
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Package Description CHIPFET-8
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 3.1 A
Drain-source On Resistance-Max 0.075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XDSO-C8
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.6 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form C BEND
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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