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Part Details for NTMD4840NR2G by onsemi
Overview of NTMD4840NR2G by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
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Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for NTMD4840NR2G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
74AK1034
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Newark | Mosfet, Dual N Ch, 30V, 5.5A, Soic-8 |Onsemi NTMD4840NR2G Min Qty: 1400 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.3900 / $0.4300 | Buy Now |
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Bristol Electronics | 1589 |
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RFQ | ||
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Bristol Electronics | 100000 |
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RFQ | ||
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Quest Components | 1271 |
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$0.3388 / $0.8470 | Buy Now | |
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Rochester Electronics | NTMD4840N - Small Signal Field-Effect Transistor, 4.5A, 30V, 2-Element, N-Channel, MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 344602 |
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$0.2229 / $0.2622 | Buy Now |
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Ameya Holding Limited | Power MOSFET | 162833 |
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RFQ | |
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Chip 1 Exchange | INSTOCK | 19500 |
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RFQ | |
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Chip1Cloud | MOSFET 2N-CH 30V 4.5A 8SOIC | 23000 |
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RFQ | |
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DISTI #
4184979
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Farnell | MOSFET, DUAL N CH, 30V, 5.5A, SOIC-8 RoHS: Compliant Min Qty: 2500 Lead time: 3 Weeks, 1 Days Container: Each | 344602 |
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$0.7320 | Buy Now |
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Wuhan P&S | Power MOSFET Min Qty: 1 | 15000 |
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$0.2900 / $0.6000 | Buy Now |
Part Details for NTMD4840NR2G
NTMD4840NR2G CAD Models
NTMD4840NR2G Part Data Attributes
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NTMD4840NR2G
onsemi
Buy Now
Datasheet
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Compare Parts:
NTMD4840NR2G
onsemi
Dual N-Channel Power MOSFET 30V, 7.5A, 24mΩ, SOIC-8 Narrow Body, 2500-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SOIC-8 Narrow Body | |
| Package Description | SOIC-8 | |
| Pin Count | 8 | |
| Manufacturer Package Code | 751-07 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 28 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 4.5 A | |
| Drain-source On Resistance-Max | 0.024 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 70 pF | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.14 W | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |