Datasheets
NTMFS4922NET1G by:

Power MOSFET 30V 147A 2.0 mOhm Single N-Channel Thermally Enhanced SO-8FL, DFN5 5X6, 1.27P (SO 8FL), 1500-REEL

Part Details for NTMFS4922NET1G by onsemi

Overview of NTMFS4922NET1G by onsemi

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Price & Stock for NTMFS4922NET1G

Part # Distributor Description Stock Price Buy
DISTI # 74AK1078
Newark Ntmfs4922Net1G, Single Mosfets |Onsemi NTMFS4922NET1G Min Qty: 370 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 100 $1.4000
  • 500 $1.2900
  • 1,000 $1.1600
  • 2,500 $0.9410
  • 5,000 $0.9100
$0.9100 / $1.4000 Buy Now
Rochester Electronics NTMFS4922NE - 30 V, 147 A, Single N-Channel, Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 83020
  • 1 $1.0100
  • 25 $0.9922
  • 100 $0.9517
  • 500 $0.9112
  • 1,000 $0.8605
$0.8605 / $1.0100 Buy Now
DISTI # 4185023
Farnell NTMFS4922NET1G, SINGLE MOSFETS RoHS: Compliant Min Qty: 1500 Lead time: 3 Weeks, 1 Days Container: Each 83020
  • 1,500 $1.3905
$1.3905 Buy Now

Part Details for NTMFS4922NET1G

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NTMFS4922NET1G Part Data Attributes:

NTMFS4922NET1G onsemi
Buy Now Datasheet
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NTMFS4922NET1G onsemi Power MOSFET 30V 147A 2.0 mOhm Single N-Channel Thermally Enhanced SO-8FL, DFN5 5X6, 1.27P (SO 8FL), 1500-REEL
Pbfree Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code DFN5 5X6, 1.27P (SO 8FL)
Package Description HALOGEN FREE AND ROHS COMPLIANT, CASE 488AA-01, SO-8FL, DFN5, 6 PIN
Pin Count 5
Manufacturer Package Code 488AA
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 29.1 A
Drain-source On Resistance-Max 0.003 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 3
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 69.44 W
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

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