Datasheets
NTNS4C69NTCG by: onsemi

MOSFET, Single N−Channel Small Signal MOSFET, 30V, 1000mA, 155mΩ, 8000-REEL

Part Details for NTNS4C69NTCG by onsemi

Overview of NTNS4C69NTCG by onsemi

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Applications Energy and Power Systems Renewable Energy Automotive

Price & Stock for NTNS4C69NTCG

Part # Distributor Description Stock Price Buy
DISTI # NTNS4C69NTCG
Avnet Americas Trans MOSFET N-CH 30V 1A 3-Pin XDFN T/R - Tape and Reel (Alt: NTNS4C69NTCG) RoHS: Compliant Min Qty: 1667 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel 15514 Partner Stock
  • 1,667 $0.4440
  • 1,700 $0.4320
  • 3,400 $0.4200
  • 8,400 $0.4080
  • 17,000 $0.3960
  • 84,000 $0.3840
  • 170,000 $0.3720
$0.3720 / $0.4440 Buy Now
Bristol Electronics   4000
RFQ
Rochester Electronics MOSFET, Single N Channel Small Signal MOSFET, 30V, 1000mA, 155m ' RoHS: Compliant Status: Obsolete Min Qty: 1 48000
  • 1 $0.4725
  • 25 $0.4630
  • 100 $0.4442
  • 500 $0.4252
  • 1,000 $0.4016
$0.4016 / $0.4725 Buy Now
DISTI # NTNS4C69NTCG
Avnet Americas Trans MOSFET N-CH 30V 1A 3-Pin XDFN T/R - Tape and Reel (Alt: NTNS4C69NTCG) RoHS: Compliant Min Qty: 1667 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel 15514 Partner Stock
  • 1,667 $0.4440
  • 1,700 $0.4320
  • 3,400 $0.4200
  • 8,400 $0.4080
  • 17,000 $0.3960
  • 84,000 $0.3840
  • 170,000 $0.3720
$0.3720 / $0.4440 Buy Now
DISTI # 4280991
Farnell MISCELLANEOUS MOSFETS RoHS: Compliant Min Qty: 8000 Lead time: 3 Weeks, 1 Days Container: Each 48000
  • 8,000 $0.4734
$0.4734 Buy Now
Flip Electronics Stock, ship today 15514
  • 1 $0.3000
$0.3000 RFQ

Part Details for NTNS4C69NTCG

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NTNS4C69NTCG Part Data Attributes:

NTNS4C69NTCG onsemi
Buy Now Datasheet
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NTNS4C69NTCG onsemi MOSFET, Single N−Channel Small Signal MOSFET, 30V, 1000mA, 155mΩ, 8000-REEL
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Package Description SOT-883, XDFN-3
Manufacturer Package Code 506CB
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 1 A
Drain-source On Resistance-Max 0.155 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PBCC-N3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.178 W
Surface Mount YES
Terminal Finish Nickel/Gold/Palladium (Ni/Au/Pd)
Terminal Form NO LEAD
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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