| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| PD54008TR-E | STMicroelectronics | $9.9580 | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | PD54008-E vs PD54008TR-E |
| PD54008STR-E | STMicroelectronics | Check for Price | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | PD54008-E vs PD54008STR-E |
Part Details for PD54008-E by STMicroelectronics
Results Overview of PD54008-E by STMicroelectronics
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (2 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
PD54008-E Information
PD54008-E by STMicroelectronics is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for PD54008-E
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
497-PD54008-E-ND
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DigiKey | RF MOSFET LDMOS 7.5V POWERSO10 Min Qty: 1 Container: Tube |
388 Tube |
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$9.7137 / $15.5600 | Buy Now |
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DISTI #
PD54008-E
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TME | Transistor: N-MOSFET, unipolar, 25V, 5A, 26.7W, PowerSO10RF Min Qty: 1 | 0 |
|
$10.5400 / $14.8900 | RFQ |
|
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Chip Stock | Trans RF MOSFET N-CH 25V 5A 3-Pin(2+Tab) PowerSO-10RF (Formed lead) Tube | 2580 |
|
RFQ |
PD54008-E CAD Models
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PD54008-E Part Data Attributes
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PD54008-E
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
PD54008-E
STMicroelectronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | SOT | |
| Package Description | Rohs Compliant, Plastic, Powerso-10rf, 2 Pin | |
| Pin Count | 10 | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 23 Weeks | |
| Additional Feature | High Reliability | |
| Case Connection | Source | |
| Configuration | Single | |
| DS Breakdown Voltage-Min | 25 V | |
| Drain Current-Max (ID) | 5 A | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 8.5 Pf | |
| Highest Frequency Band | Ultra High Frequency Band | |
| JESD-30 Code | R-PDSO-G2 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 165 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 73 W | |
| Power Gain-Min (Gp) | 10 Db | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Gull Wing | |
| Terminal Position | Dual | |
| Transistor Application | Amplifier | |
| Transistor Element Material | Silicon |
Alternate Parts for PD54008-E
This table gives cross-reference parts and alternative options found for PD54008-E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PD54008-E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
PD54008-E Frequently Asked Questions (FAQ)
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STMicroelectronics provides a recommended PCB layout in the application note AN5323, which includes guidelines for component placement, routing, and thermal management to ensure optimal performance and thermal dissipation.
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The PD54008-E has a high power dissipation, so thermal management is crucial. Use a heat sink, ensure good airflow, and follow the recommended PCB layout to minimize thermal resistance. Also, consider using thermal interface materials and thermal pads to improve heat transfer.
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The input capacitors should be low-ESR, high-frequency capacitors with a voltage rating of at least 50V. A minimum capacitance of 10uF is recommended, and the capacitors should be placed as close as possible to the PD54008-E.
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To ensure EMC compliance, follow the recommended PCB layout, use a shielded enclosure, and add EMI filters or common-mode chokes to the input and output lines. Also, ensure that the PD54008-E is properly decoupled and that the system meets the relevant EMC standards.
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The OCP feature has a response time of around 1us, and it may not detect very short-duration overcurrent events. Additionally, the OCP threshold is programmable, but it may not be suitable for all applications. Always verify the OCP settings and response time in your specific use case.