| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| PD54008-E | STMicroelectronics | $8.9112 | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | PD54008S-E vs PD54008-E |
| PD54008TR-E | STMicroelectronics | $9.9580 | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | PD54008S-E vs PD54008TR-E |
| PD54008STR-E | STMicroelectronics | Check for Price | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | PD54008S-E vs PD54008STR-E |
Part Details for PD54008S-E by STMicroelectronics
Results Overview of PD54008S-E by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (3 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
PD54008S-E Information
PD54008S-E by STMicroelectronics is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for PD54008S-E
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
497-6714-5-ND
|
DigiKey | RF MOSFET LDMOS 7.5V PWRSO-10RF Min Qty: 400 Container: Tube |
0 Tube |
|
$10.4344 | Buy Now |
|
|
Vyrian | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 4155 |
|
RFQ |
PD54008S-E Part Data Attributes
|
|
PD54008S-E
STMicroelectronics
Buy Now
Datasheet
|
Compare Parts:
PD54008S-E
STMicroelectronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | SOT | |
| Package Description | Rohs Compliant, Plastic, Powerso-10rf, 2 Pin | |
| Pin Count | 10 | |
| ECCN Code | EAR99 | |
| Additional Feature | High Reliability | |
| Case Connection | Source | |
| Configuration | Single | |
| DS Breakdown Voltage-Min | 25 V | |
| Drain Current-Max (ID) | 5 A | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 8.5 Pf | |
| Highest Frequency Band | Ultra High Frequency Band | |
| JESD-30 Code | R-PDSO-F2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 165 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 73 W | |
| Power Gain-Min (Gp) | 10 Db | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Form | Flat | |
| Terminal Position | Dual | |
| Transistor Application | Amplifier | |
| Transistor Element Material | Silicon |
Alternate Parts for PD54008S-E
This table gives cross-reference parts and alternative options found for PD54008S-E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PD54008S-E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
PD54008S-E Frequently Asked Questions (FAQ)
-
STMicroelectronics provides a recommended PCB layout in the application note AN5323, which includes guidelines for component placement, routing, and thermal management to ensure optimal performance and minimize electromagnetic interference (EMI).
-
The input capacitor values depend on the input voltage, output voltage, and output current. A general guideline is to use a minimum of 10uF ceramic capacitor with a voltage rating of at least 1.5 times the input voltage. However, it's recommended to consult the application note AN5323 and perform simulations to determine the optimal capacitor values for your specific design.
-
The PD54008S-E is rated for operation up to 105°C ambient temperature, but it's recommended to derate the output current and voltage according to the thermal derating curve provided in the datasheet to ensure reliable operation.
-
The PD54008S-E has built-in OVP and UVP features, but they can be adjusted or customized using external resistors and capacitors. Consult the datasheet and application note AN5323 for guidance on implementing OVP and UVP in your design.
-
The output capacitor value and type depend on the output voltage, output current, and desired ripple voltage. A general guideline is to use a minimum of 10uF ceramic capacitor with a voltage rating of at least 1.5 times the output voltage. However, it's recommended to consult the application note AN5323 and perform simulations to determine the optimal capacitor values for your specific design.