Datasheets
PD55003-01 by: STMicroelectronics

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Part Details for PD55003-01 by STMicroelectronics

Results Overview of PD55003-01 by STMicroelectronics

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

PD55003-01 Information

PD55003-01 by STMicroelectronics is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

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PD55003-01 Part Data Attributes

PD55003-01 STMicroelectronics
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PD55003-01 STMicroelectronics RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Part Life Cycle Code Obsolete
Package Description Power, Plastic, Fp-12
Pin Count 12
ECCN Code EAR99
Additional Feature High Reliability
Case Connection Source
Configuration Single
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 2.5 A
FET Technology Metal-Oxide Semiconductor
Feedback Cap-Max (Crss) 2.46 Pf
Highest Frequency Band Ultra High Frequency Band
JESD-30 Code S-PQCC-N12
Number of Elements 1
Number of Terminals 12
Operating Mode Enhancement Mode
Operating Temperature-Max 150 °C
Package Body Material Plastic/Epoxy
Package Shape Square
Package Style Chip Carrier
Polarity/Channel Type N-Channel
Power Gain-Min (Gp) 14 Db
Qualification Status Not Qualified
Surface Mount Yes
Terminal Form No Lead
Terminal Position Quad
Transistor Application Amplifier
Transistor Element Material Silicon

Alternate Parts for PD55003-01

This table gives cross-reference parts and alternative options found for PD55003-01. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PD55003-01, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
PD55003TR-E STMicroelectronics $4.5590 RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET PD55003-01 vs PD55003TR-E
PD55003S-E STMicroelectronics $6.9543 RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET PD55003-01 vs PD55003S-E
ARF464B Advanced Power Technology Check for Price RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247 PD55003-01 vs ARF464B
ARF464A Advanced Power Technology Check for Price RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247 PD55003-01 vs ARF464A
PD55003STR-E STMicroelectronics Check for Price RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET PD55003-01 vs PD55003STR-E
PD55003S STMicroelectronics Check for Price RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET PD55003-01 vs PD55003S
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