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PD55008-E by:
STMicroelectronics

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Part Details for PD55008-E by STMicroelectronics

Results Overview of PD55008-E by STMicroelectronics

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Applications Consumer Electronics Audio and Video Systems Entertainment and Gaming

PD55008-E Information

PD55008-E by STMicroelectronics is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for PD55008-E

Part # Distributor Description Stock Price Buy
DISTI # 51AC9372
Newark Rf Fet, 40V, 4A, Powerso-10Rf, |Stmicroelectronics PD55008-E RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 34
  • 1 $14.5900
  • 10 $11.5900
  • 25 $10.9900
  • 50 $10.3800
  • 100 $10.0000
  • 250 $9.6100
  • 500 $9.3800
$9.3800 / $14.5900 Buy Now
DISTI # 497-5299-5-ND
DigiKey RF MOSFET LDMOS 12.5V POWERSO10 Min Qty: 1 Container: Tube 84
Tube
  • 1 $17.5100
  • 10 $13.9050
  • 50 $12.4616
  • 100 $12.0148
  • 250 $11.5430
  • 500 $11.2587
$11.2587 / $17.5100 Buy Now
DISTI # 90015138
Verical Trans RF MOSFET N-CH 40V 4A 3-Pin PowerSO-10RF (Formed lead) Tube RoHS: Exempt Min Qty: 400 Package Multiple: 400 Date Code: 2451 Americas - 1200
  • 400 $11.2240
  • 2,000 $11.1870
  • 4,000 $11.0760
  • 6,000 $10.9640
  • 8,000 $10.8530
  • 10,000 $10.7410
  • 20,000 $10.6290
$10.6290 / $11.2240 Buy Now
DISTI # 511-PD55008-E
Mouser Electronics RF MOSFET Transistors RF POWER TRANS RoHS: Compliant 1322
  • 1 $17.5100
  • 10 $12.4700
  • 100 $11.4000
$11.4000 / $17.5100 Buy Now
DISTI # V36:1790_06556157
Arrow Electronics Trans RF MOSFET N-CH 40V 4A 3-Pin PowerSO-10RF (Formed lead) Tube COO: Malaysia RoHS: Exempt Min Qty: 400 Package Multiple: 400 Lead time: 23 Weeks Date Code: 2451 Americas - 1200
  • 400 $11.2240
  • 2,000 $11.1870
  • 4,000 $11.0760
  • 6,000 $10.9640
  • 8,000 $10.8530
  • 10,000 $10.7410
  • 20,000 $10.6290
$10.6290 / $11.2240 Buy Now
STMicroelectronics RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs COO: Malaysia Min Qty: 1 1322
  • 1 $17.5100
  • 10 $12.4700
  • 100 $11.4000
  • 400 $11.4000
$11.4000 / $17.5100 Buy Now
Future Electronics PD55008-E Series 500 MHz 8 W 40 V N-Channel RF Power Transistor - POWERSO-10RF RoHS: Compliant pbFree: Yes Min Qty: 400 Package Multiple: 50 Lead time: 23 Weeks Container: Tray 0
Tray
  • 50 $10.1700
  • 100 $10.1100
  • 150 $10.0800
  • 200 $10.0600
  • 250 $9.9900
$9.9900 / $10.1700 Buy Now
DISTI # V36:1790_06556157
Arrow Electronics Trans RF MOSFET N-CH 40V 4A 3-Pin PowerSO-10RF (Formed lead) Tube COO: Malaysia RoHS: Exempt Min Qty: 400 Package Multiple: 400 Lead time: 23 Weeks Date Code: 2451 Americas - 1200
  • 400 $11.2240
  • 2,000 $11.1870
  • 4,000 $11.0760
  • 6,000 $10.9640
  • 8,000 $10.8530
  • 10,000 $10.7410
  • 20,000 $10.6290
$10.6290 / $11.2240 Buy Now
DISTI # 90015138
Verical Trans RF MOSFET N-CH 40V 4A 3-Pin PowerSO-10RF (Formed lead) Tube COO: Malaysia RoHS: Exempt Min Qty: 400 Package Multiple: 400 Date Code: 2451 Americas - 1200
  • 400 $11.2240
  • 2,000 $11.1870
  • 4,000 $11.0760
  • 6,000 $10.9640
  • 8,000 $10.8530
  • 10,000 $10.7410
  • 20,000 $10.6290
$10.6290 / $11.2240 Buy Now
DISTI # 90015138
Verical Trans RF MOSFET N-CH 40V 4A 3-Pin PowerSO-10RF (Formed lead) Tube COO: Malaysia RoHS: Exempt Min Qty: 400 Package Multiple: 400 Date Code: 2451 Americas - 1200
  • 400 $11.2240
  • 2,000 $11.1870
  • 4,000 $11.0760
  • 6,000 $10.9640
  • 8,000 $10.8530
  • 10,000 $10.7410
  • 20,000 $10.6290
$10.6290 / $11.2240 Buy Now
DISTI # PD55008-E
TME Transistor: N-MOSFET, unipolar, 40V, 4A, 52.8W, PowerSO10RF Min Qty: 1 0
  • 1 $16.7900
  • 3 $15.7300
  • 5 $14.4800
  • 10 $13.8700
$13.8700 / $16.7900 RFQ
DISTI # V36:1790_06556157
Arrow Electronics Trans RF MOSFET N-CH 40V 4A 3-Pin PowerSO-10RF (Formed lead) Tube COO: Malaysia RoHS: Exempt Min Qty: 400 Package Multiple: 400 Lead time: 23 Weeks Date Code: 2451 Americas - 1200
  • 400 $11.2240
  • 2,000 $11.1870
  • 4,000 $11.0760
  • 6,000 $10.9640
  • 8,000 $10.8530
  • 10,000 $10.7410
  • 20,000 $10.6290
$10.6290 / $11.2240 Buy Now
Chip Stock Trans RF MOSFET N-CH 40V 4A 3-Pin(2+Tab) PowerSO-10RF (Formed lead) Tube 1125
RFQ

PD55008-E Part Data Attributes

PD55008-E STMicroelectronics
Buy Now Datasheet
Compare Parts:
PD55008-E STMicroelectronics RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Active
Part Package Code SOT
Package Description Rohs Compliant, Plastic, Powerso-10rf, 2 Pin
Pin Count 10
ECCN Code EAR99
Factory Lead Time 23 Weeks
Additional Feature High Reliability
Case Connection Source
Configuration Single
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 4 A
FET Technology Metal-Oxide Semiconductor
Feedback Cap-Max (Crss) 2.8 Pf
Highest Frequency Band Ultra High Frequency Band
JESD-30 Code R-PDSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 3
Number of Elements 1
Number of Terminals 2
Operating Mode Enhancement Mode
Operating Temperature-Max 165 °C
Package Body Material Plastic/Epoxy
Package Shape Rectangular
Package Style Small Outline
Peak Reflow Temperature (Cel) 250
Polarity/Channel Type N-Channel
Power Dissipation-Max (Abs) 52.8 W
Power Gain-Min (Gp) 15 Db
Qualification Status Not Qualified
Surface Mount Yes
Terminal Finish Matte Tin (Sn) - Annealed
Terminal Form Gull Wing
Terminal Position Dual
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application Amplifier
Transistor Element Material Silicon

Alternate Parts for PD55008-E

This table gives cross-reference parts and alternative options found for PD55008-E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PD55008-E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
PD55008 STMicroelectronics Check for Price RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET PD55008-E vs PD55008
Part Number Manufacturer Composite Price Description Compare
PD55008 STMicroelectronics Check for Price RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET PD55008-E vs PD55008
PD55008STR-E STMicroelectronics Check for Price RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET PD55008-E vs PD55008STR-E
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PD55008-E Frequently Asked Questions (FAQ)

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