| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| PD55025S-E | STMicroelectronics | $23.7737 | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | PD55025TR-E vs PD55025S-E |
| PD55025STR-E | STMicroelectronics | Check for Price | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | PD55025TR-E vs PD55025STR-E |
Part Details for PD55025TR-E by STMicroelectronics
Results Overview of PD55025TR-E by STMicroelectronics
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (2 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Aerospace and Defense
Transportation and Logistics
Renewable Energy
Automotive
Robotics and Drones
PD55025TR-E Information
PD55025TR-E by STMicroelectronics is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for PD55025TR-E
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
11AN7319
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Newark | Rf Power Fet, N-Ch, 40V, Powerso-10Rf, |Stmicroelectronics PD55025TR-E RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$28.2800 / $40.7800 | Buy Now |
|
DISTI #
497-12510-1-ND
|
DigiKey | RF MOSFET LDMOS 12.5V PWRSO-10RF Min Qty: 1 Container: Cut Tape |
0 Cut Tape |
|
$23.5115 / $31.8900 | Buy Now |
|
DISTI #
497-12510-2-ND
|
DigiKey | RF MOSFET LDMOS 12.5V PWRSO-10RF Min Qty: 600 Container: Tape & Reel |
0 Tape & Reel |
|
$21.2386 | Buy Now |
|
DISTI #
497-12510-6-ND
|
DigiKey | RF MOSFET LDMOS 12.5V PWRSO-10RF Min Qty: 1 Container: Digi-Reel |
0 Digi-Reel® |
|
$23.5115 / $31.8900 | Buy Now |
|
DISTI #
511-PD55025TR-E
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Mouser Electronics | RF MOSFET Transistors RF Power Trans N-Channel RoHS: Compliant | 0 |
|
$21.9800 | Order Now |
|
|
Future Electronics | PD55025-E Series 500 MHz 25 W 40 V N-Channel RF Power Transistor - POWERSO-10RF RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 600 Lead time: 23 Weeks Container: Reel | 0Reel |
|
$19.2100 | Buy Now |
|
DISTI #
PD55025TR-E
|
TME | Transistor: N-MOSFET, unipolar, 40V, 7A, 79W, PowerSO10RF Min Qty: 1 | 0 |
|
$26.6300 / $41.5600 | RFQ |
|
|
Vyrian | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 7483 |
|
RFQ |
PD55025TR-E Part Data Attributes
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PD55025TR-E
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
PD55025TR-E
STMicroelectronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | SOT | |
| Package Description | Plastic, Powerso-10rf, 2 Pin | |
| Pin Count | 10 | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 23 Weeks | |
| Additional Feature | High Reliability | |
| Case Connection | Source | |
| Configuration | Single | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 7 A | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 5.8 Pf | |
| Highest Frequency Band | Ultra High Frequency Band | |
| JESD-30 Code | R-PDSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 165 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 225 | |
| Polarity/Channel Type | N-Channel | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Gull Wing | |
| Terminal Position | Dual | |
| Transistor Application | Amplifier | |
| Transistor Element Material | Silicon |
Alternate Parts for PD55025TR-E
This table gives cross-reference parts and alternative options found for PD55025TR-E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PD55025TR-E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
PD55025TR-E Frequently Asked Questions (FAQ)
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STMicroelectronics provides a recommended PCB layout in the application note AN5275, which includes guidelines for component placement, routing, and thermal management to ensure optimal performance and minimize electromagnetic interference (EMI).
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The input capacitor values depend on the input voltage, output voltage, and output current. A general guideline is to use a minimum of 10uF ceramic capacitors with a voltage rating of at least 1.5 times the input voltage. However, it's recommended to consult the application note AN5275 and perform simulations to determine the optimal capacitor values for your specific design.
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The PD55025TR-E is rated for operation up to 105°C ambient temperature, but it's recommended to derate the output current and voltage according to the thermal derating curve provided in the datasheet to ensure reliable operation.
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The PD55025TR-E has built-in OVP and UVP, but it's recommended to add external circuitry to provide additional protection. A simple OVP circuit can be implemented using a zener diode and a resistor, while UVP can be achieved using a voltage supervisor IC or a comparator circuit.
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The output capacitor value and type depend on the output voltage and current. A general guideline is to use a minimum of 22uF ceramic capacitors with a voltage rating of at least 1.5 times the output voltage. However, it's recommended to consult the application note AN5275 and perform simulations to determine the optimal capacitor values for your specific design.