| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| PD57070S-E | STMicroelectronics | Check for Price | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | PD57070 vs PD57070S-E |
| PD57070-E | STMicroelectronics | Check for Price | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | PD57070 vs PD57070-E |
| BLF0810S-180 | NXP Semiconductors | Check for Price | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | PD57070 vs BLF0810S-180 |
| PD57070STR-E | STMicroelectronics | Check for Price | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | PD57070 vs PD57070STR-E |
Part Details for PD57070 by STMicroelectronics
Results Overview of PD57070 by STMicroelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (4 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
PD57070 Information
PD57070 by STMicroelectronics is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
PD57070 Part Data Attributes
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PD57070
STMicroelectronics
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Datasheet
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PD57070
STMicroelectronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
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| Pbfree Code | No | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | SOT | |
| Package Description | Power, Plastic, So-2 | |
| Pin Count | 2 | |
| ECCN Code | EAR99 | |
| Additional Feature | High Reliability | |
| Case Connection | Source | |
| Configuration | Single | |
| DS Breakdown Voltage-Min | 65 V | |
| Drain Current-Max (ID) | 7 A | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 3.8 Pf | |
| Highest Frequency Band | Ultra High Frequency Band | |
| JESD-30 Code | R-PDSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 165 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 95 W | |
| Power Gain-Min (Gp) | 13 Db | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | Gull Wing | |
| Terminal Position | Dual | |
| Transistor Application | Amplifier | |
| Transistor Element Material | Silicon |
Alternate Parts for PD57070
This table gives cross-reference parts and alternative options found for PD57070. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PD57070, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.