| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| PD85015-E | STMicroelectronics | Check for Price | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | PD85015STR-E vs PD85015-E |
| PD85015TR-E | STMicroelectronics | Check for Price | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | PD85015STR-E vs PD85015TR-E |
Part Details for PD85015STR-E by STMicroelectronics
Results Overview of PD85015STR-E by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (2 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
PD85015STR-E Information
PD85015STR-E by STMicroelectronics is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for PD85015STR-E
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
497-12511-2-ND
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DigiKey | RF MOSFET LDMOS 13.6V PWRSO-10RF Min Qty: 600 Container: Tape & Reel |
0 Tape & Reel |
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$14.4476 | Buy Now |
|
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Vyrian | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 4307 |
|
RFQ |
PD85015STR-E Part Data Attributes
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PD85015STR-E
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
PD85015STR-E
STMicroelectronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | SOT | |
| Package Description | Rohs Compliant, Plastic, Power So-10rf, 2 Pin | |
| Pin Count | 10 | |
| ECCN Code | EAR99 | |
| Additional Feature | High Reliability | |
| Case Connection | Source | |
| Configuration | Single | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 5 A | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 1.2 Pf | |
| Highest Frequency Band | Ultra High Frequency Band | |
| JESD-30 Code | R-PDFP-F2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 165 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flatpack | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 59 W | |
| Power Gain-Min (Gp) | 16 Db | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Form | Flat | |
| Terminal Position | Dual | |
| Transistor Application | Amplifier | |
| Transistor Element Material | Silicon |
Alternate Parts for PD85015STR-E
This table gives cross-reference parts and alternative options found for PD85015STR-E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PD85015STR-E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
PD85015STR-E Frequently Asked Questions (FAQ)
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STMicroelectronics provides a recommended PCB layout in the application note AN4979, which includes guidelines for thermal vias, copper pours, and component placement to ensure optimal thermal performance.
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The input capacitor selection depends on the input voltage, current, and frequency. A general guideline is to choose a capacitor with a voltage rating of at least 1.5 times the maximum input voltage, and a capacitance value between 1uF to 10uF. Consult the application note AN4979 for more detailed guidance.
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The maximum allowed voltage drop across the PD85015STR-E is 0.5V. Exceeding this voltage drop may affect the device's performance and reliability.
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The PD85015STR-E is rated for operation up to 105°C. However, the device's performance and reliability may degrade at high temperatures. Consult the datasheet and application notes for thermal derating guidelines and consider using thermal management techniques to ensure reliable operation.
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To ensure EMC, follow the guidelines in the application note AN4979, which includes recommendations for PCB layout, component selection, and shielding. Additionally, consult the IEC 61000-4-2 standard for electromagnetic immunity testing.